Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging

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This paper presents the design and measurement of a 2 × 56 Gb/s PAM-4 dual-channel electro-absorption modulator (EAM) driver in a 0.25-μm SiGe:C BiCMOS process for 3D wafer scale packaging. In this paper, a new EAM coupling method for 3D wafer scale packing is presented. The driver employs an optimized output interface with the EAM, which increases the output voltage swing by 53% while keep the same bandwidth and power consumption. The driver has 13.7 dB of gain with a 3 dB bandwidth of 31.5 GHz, which delivers 3 V ppd at 56 Gb/s PAM-4 and consumes 364.5 mW per channel, resulting in a figure of merit of 6.5 pJ/bit.

Originele taal-2Engels
Titel2018 Asia-Pacific Microwave Conference, APMC 2018
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's237-239
Aantal pagina's3
ISBN van elektronische versie978-4-9023-3945-1
DOI's
StatusGepubliceerd - 16 jan 2019
Evenement30th Asia-Pacific Microwave Conference, APMC 2018 - Kyoto, Japan
Duur: 6 nov 20189 nov 2018

Congres

Congres30th Asia-Pacific Microwave Conference, APMC 2018
LandJapan
StadKyoto
Periode6/11/189/11/18

Vingerafdruk

Pulse amplitude modulation
Modulators
Packaging
Bandwidth
Electric power utilization
Electric potential

Citeer dit

Zhang, X., Liu, X., van Dommele, A. R., & Matters-Kammerer, M. K. (2019). Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging. In 2018 Asia-Pacific Microwave Conference, APMC 2018 (blz. 237-239). [8617323] Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.23919/APMC.2018.8617323
Zhang, Xi ; Liu, Xiao ; van Dommele, A.R. ; Matters-Kammerer, Marion K. / Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging. 2018 Asia-Pacific Microwave Conference, APMC 2018. Piscataway : Institute of Electrical and Electronics Engineers, 2019. blz. 237-239
@inproceedings{189b6b4d7a5547cb84440df2acd8a925,
title = "Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging",
abstract = "This paper presents the design and measurement of a 2 × 56 Gb/s PAM-4 dual-channel electro-absorption modulator (EAM) driver in a 0.25-μm SiGe:C BiCMOS process for 3D wafer scale packaging. In this paper, a new EAM coupling method for 3D wafer scale packing is presented. The driver employs an optimized output interface with the EAM, which increases the output voltage swing by 53{\%} while keep the same bandwidth and power consumption. The driver has 13.7 dB of gain with a 3 dB bandwidth of 31.5 GHz, which delivers 3 V ppd at 56 Gb/s PAM-4 and consumes 364.5 mW per channel, resulting in a figure of merit of 6.5 pJ/bit.",
keywords = "Broadband amplifier, Electro-absorption modulator (EAM), Modulator driver, PAM-4, SiGe:C BiCMOS integrated circuit",
author = "Xi Zhang and Xiao Liu and {van Dommele}, A.R. and Matters-Kammerer, {Marion K.}",
year = "2019",
month = "1",
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doi = "10.23919/APMC.2018.8617323",
language = "English",
pages = "237--239",
booktitle = "2018 Asia-Pacific Microwave Conference, APMC 2018",
publisher = "Institute of Electrical and Electronics Engineers",
address = "United States",

}

Zhang, X, Liu, X, van Dommele, AR & Matters-Kammerer, MK 2019, Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging. in 2018 Asia-Pacific Microwave Conference, APMC 2018., 8617323, Institute of Electrical and Electronics Engineers, Piscataway, blz. 237-239, Kyoto, Japan, 6/11/18. https://doi.org/10.23919/APMC.2018.8617323

Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging. / Zhang, Xi; Liu, Xiao; van Dommele, A.R.; Matters-Kammerer, Marion K.

2018 Asia-Pacific Microwave Conference, APMC 2018. Piscataway : Institute of Electrical and Electronics Engineers, 2019. blz. 237-239 8617323.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

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T1 - Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging

AU - Zhang, Xi

AU - Liu, Xiao

AU - van Dommele, A.R.

AU - Matters-Kammerer, Marion K.

PY - 2019/1/16

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N2 - This paper presents the design and measurement of a 2 × 56 Gb/s PAM-4 dual-channel electro-absorption modulator (EAM) driver in a 0.25-μm SiGe:C BiCMOS process for 3D wafer scale packaging. In this paper, a new EAM coupling method for 3D wafer scale packing is presented. The driver employs an optimized output interface with the EAM, which increases the output voltage swing by 53% while keep the same bandwidth and power consumption. The driver has 13.7 dB of gain with a 3 dB bandwidth of 31.5 GHz, which delivers 3 V ppd at 56 Gb/s PAM-4 and consumes 364.5 mW per channel, resulting in a figure of merit of 6.5 pJ/bit.

AB - This paper presents the design and measurement of a 2 × 56 Gb/s PAM-4 dual-channel electro-absorption modulator (EAM) driver in a 0.25-μm SiGe:C BiCMOS process for 3D wafer scale packaging. In this paper, a new EAM coupling method for 3D wafer scale packing is presented. The driver employs an optimized output interface with the EAM, which increases the output voltage swing by 53% while keep the same bandwidth and power consumption. The driver has 13.7 dB of gain with a 3 dB bandwidth of 31.5 GHz, which delivers 3 V ppd at 56 Gb/s PAM-4 and consumes 364.5 mW per channel, resulting in a figure of merit of 6.5 pJ/bit.

KW - Broadband amplifier

KW - Electro-absorption modulator (EAM)

KW - Modulator driver

KW - PAM-4

KW - SiGe:C BiCMOS integrated circuit

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BT - 2018 Asia-Pacific Microwave Conference, APMC 2018

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Zhang X, Liu X, van Dommele AR, Matters-Kammerer MK. Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging. In 2018 Asia-Pacific Microwave Conference, APMC 2018. Piscataway: Institute of Electrical and Electronics Engineers. 2019. blz. 237-239. 8617323 https://doi.org/10.23919/APMC.2018.8617323