Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging

Xi Zhang; Xiao Liu; A.R. van Dommele; Marion K. Matters-Kammerer

doi:10.23919/APMC.2018.8617323

Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging

Xi Zhang, Xiao Liu, A.R. van Dommele, Marion K. Matters-Kammerer

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

8 Citaten (Scopus)

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This paper presents the design and measurement of a 2 × 56 Gb/s PAM-4 dual-channel electro-absorption modulator (EAM) driver in a 0.25-μm SiGe:C BiCMOS process for 3D wafer scale packaging. In this paper, a new EAM coupling method for 3D wafer scale packing is presented. The driver employs an optimized output interface with the EAM, which increases the output voltage swing by 53% while keep the same bandwidth and power consumption. The driver has 13.7 dB of gain with a 3 dB bandwidth of 31.5 GHz, which delivers 3 V _ppd at 56 Gb/s PAM-4 and consumes 364.5 mW per channel, resulting in a figure of merit of 6.5 pJ/bit.

Originele taal-2	Engels
Titel	2018 Asia-Pacific Microwave Conference, APMC 2018
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	237-239
Aantal pagina's	3
ISBN van elektronische versie	978-4-9023-3945-1
DOI's	https://doi.org/10.23919/APMC.2018.8617323
Status	Gepubliceerd - 16 jan. 2019
Evenement	2018 Asia-Pacific Microwave Conference, APMC 2018 - Kyoto, Japan Duur: 6 nov. 2018 → 9 nov. 2018 Congresnummer: 30

Congres

Congres	2018 Asia-Pacific Microwave Conference, APMC 2018
Land/Regio	Japan
Stad	Kyoto
Periode	6/11/18 → 9/11/18

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@inproceedings{189b6b4d7a5547cb84440df2acd8a925,

title = "Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging",

abstract = " This paper presents the design and measurement of a 2 × 56 Gb/s PAM-4 dual-channel electro-absorption modulator (EAM) driver in a 0.25-μm SiGe:C BiCMOS process for 3D wafer scale packaging. In this paper, a new EAM coupling method for 3D wafer scale packing is presented. The driver employs an optimized output interface with the EAM, which increases the output voltage swing by 53% while keep the same bandwidth and power consumption. The driver has 13.7 dB of gain with a 3 dB bandwidth of 31.5 GHz, which delivers 3 V ppd at 56 Gb/s PAM-4 and consumes 364.5 mW per channel, resulting in a figure of merit of 6.5 pJ/bit. ",

keywords = "Broadband amplifier, Electro-absorption modulator (EAM), Modulator driver, PAM-4, SiGe:C BiCMOS integrated circuit",

author = "Xi Zhang and Xiao Liu and {van Dommele}, A.R. and Matters-Kammerer, {Marion K.}",

year = "2019",

month = jan,

day = "16",

doi = "10.23919/APMC.2018.8617323",

language = "English",

pages = "237--239",

booktitle = "2018 Asia-Pacific Microwave Conference, APMC 2018",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2018 Asia-Pacific Microwave Conference, APMC 2018 ; Conference date: 06-11-2018 Through 09-11-2018",

}

Zhang, X, Liu, X, van Dommele, AR & Matters-Kammerer, MK 2019, Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging. in 2018 Asia-Pacific Microwave Conference, APMC 2018., 8617323, Institute of Electrical and Electronics Engineers, Piscataway, blz. 237-239, 2018 Asia-Pacific Microwave Conference, APMC 2018, Kyoto, Japan, 6/11/18. https://doi.org/10.23919/APMC.2018.8617323

Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging. / Zhang, Xi; Liu, Xiao; van Dommele, A.R. et al.
2018 Asia-Pacific Microwave Conference, APMC 2018. Piscataway: Institute of Electrical and Electronics Engineers, 2019. blz. 237-239 8617323.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging

AU - Zhang, Xi

AU - Liu, Xiao

AU - van Dommele, A.R.

AU - Matters-Kammerer, Marion K.

N1 - Conference code: 30

PY - 2019/1/16

Y1 - 2019/1/16

N2 - This paper presents the design and measurement of a 2 × 56 Gb/s PAM-4 dual-channel electro-absorption modulator (EAM) driver in a 0.25-μm SiGe:C BiCMOS process for 3D wafer scale packaging. In this paper, a new EAM coupling method for 3D wafer scale packing is presented. The driver employs an optimized output interface with the EAM, which increases the output voltage swing by 53% while keep the same bandwidth and power consumption. The driver has 13.7 dB of gain with a 3 dB bandwidth of 31.5 GHz, which delivers 3 V ppd at 56 Gb/s PAM-4 and consumes 364.5 mW per channel, resulting in a figure of merit of 6.5 pJ/bit.

AB - This paper presents the design and measurement of a 2 × 56 Gb/s PAM-4 dual-channel electro-absorption modulator (EAM) driver in a 0.25-μm SiGe:C BiCMOS process for 3D wafer scale packaging. In this paper, a new EAM coupling method for 3D wafer scale packing is presented. The driver employs an optimized output interface with the EAM, which increases the output voltage swing by 53% while keep the same bandwidth and power consumption. The driver has 13.7 dB of gain with a 3 dB bandwidth of 31.5 GHz, which delivers 3 V ppd at 56 Gb/s PAM-4 and consumes 364.5 mW per channel, resulting in a figure of merit of 6.5 pJ/bit.

KW - Broadband amplifier

KW - Electro-absorption modulator (EAM)

KW - Modulator driver

KW - PAM-4

KW - SiGe:C BiCMOS integrated circuit

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U2 - 10.23919/APMC.2018.8617323

DO - 10.23919/APMC.2018.8617323

M3 - Conference contribution

AN - SCOPUS:85061767848

SP - 237

EP - 239

BT - 2018 Asia-Pacific Microwave Conference, APMC 2018

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 2018 Asia-Pacific Microwave Conference, APMC 2018

Y2 - 6 November 2018 through 9 November 2018

ER -

Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging

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