Direct composition profiling in III-V nanostructures by cross-sectional STM

D.M. Bruls, P.M. Koenraad, J.H. Davies, S.P.A. Gill, Fei Long, M. Hopkinson, M.S. Skolnick, J.H. Wolter, J.T. Devreese

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademic

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Using cross-sectional STM we have studied the local compo-sition in III–V nanostructures such as GaAs/InGaAs quantum wells, InGaNAs/InP quantum wells and quantum dots, and InAs/GaAs self-assembled quantum dots. We are able to determine the local composition by either simply counting the constituent atoms, measuring the local lattice constant or measuring the relaxation of the cleaved surface due to the elastic field of the buried strained nanostructures.
Originele taal-2Engels
TitelProceedings of the 26th International Conference on the Physics of Semiconductors Inst. of Phys. Conference Series Vol.171, 29 july -2 august 2002, Edinburgh, United Kingdom
Plaats van productieBristol, UK
UitgeverijInstitue of Physics Publishing Ltd
Pagina's77-84
ISBN van geprinte versie0-7503-0924-5
StatusGepubliceerd - 2003
Evenementconference; 26th International Conference on the Physics of Semiconductors -
Duur: 1 jan 2003 → …

Publicatie series

NaamInstitute of Physics Conference Series
Volume171
ISSN van geprinte versie0951-3248

Congres

Congresconference; 26th International Conference on the Physics of Semiconductors
Periode1/01/03 → …
Ander26th International Conference on the Physics of Semiconductors

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