Direct Bandgap Type I Hexagonal Germanium/Silicon-Germanium Quantum Wells

Victor T. van Lange; Wouter H.J. Peeters; Marcel A. Verheijen; Max C. Van Hemert; Erik P.A.M. Bakkers; Jos E.M. Haverkort

doi:10.1109/SiPhotonics60897.2024.10543877

Direct Bandgap Type I Hexagonal Germanium/Silicon-Germanium Quantum Wells

Victor T. van Lange
, Wouter H.J. Peeters
, Marcel A. Verheijen
, Max C. Van Hemert
, Erik P.A.M. Bakkers
, Jos E.M. Haverkort

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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We have investigated hexagonal Germanium/Silicon-Germanium nanowire quantum well heterostructures using photoluminescence. Bright light emission and varying quantum confinement with well thickness are observed which are characteristics indicative of a direct bandgap Type I nature of the hex-Ge/SiGe QW system.

Originele taal-2	Engels
Titel	2024 IEEE Silicon Photonics Conference, SiPhotonics 2024
Uitgeverij	Institute of Electrical and Electronics Engineers
Aantal pagina's	2
ISBN van elektronische versie	979-8-3503-9404-7
DOI's	https://doi.org/10.1109/SiPhotonics60897.2024.10543877
Status	Gepubliceerd - 10 jun. 2024
Evenement	2024 IEEE Silicon Photonics Conference, SiPhotonics 2024 - Tokyo, Japan Duur: 15 apr. 2024 → 18 apr. 2024

Congres

Congres	2024 IEEE Silicon Photonics Conference, SiPhotonics 2024
Land/Regio	Japan
Stad	Tokyo
Periode	15/04/24 → 18/04/24

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10.1109/SiPhotonics60897.2024.10543877

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van Lange, V. T., Peeters, W. H. J., Verheijen, M. A., Van Hemert, M. C., Bakkers, E. P. A. M., & Haverkort, J. E. M. (2024). Direct Bandgap Type I Hexagonal Germanium/Silicon-Germanium Quantum Wells. In 2024 IEEE Silicon Photonics Conference, SiPhotonics 2024 Artikel 10543877 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/SiPhotonics60897.2024.10543877

@inproceedings{b610f96a100946de9c86bd18e6d7a175,

title = "Direct Bandgap Type I Hexagonal Germanium/Silicon-Germanium Quantum Wells",

abstract = "We have investigated hexagonal Germanium/Silicon-Germanium nanowire quantum well heterostructures using photoluminescence. Bright light emission and varying quantum confinement with well thickness are observed which are characteristics indicative of a direct bandgap Type I nature of the hex-Ge/SiGe QW system.",

keywords = "hexagonal silicon-germanium, quantum confinement, quantum well, Silicon photonics",

author = "\{van Lange\}, \{Victor T.\} and Peeters, \{Wouter H.J.\} and Verheijen, \{Marcel A.\} and \{Van Hemert\}, \{Max C.\} and Bakkers, \{Erik P.A.M.\} and Haverkort, \{Jos E.M.\}",

year = "2024",

month = jun,

day = "10",

doi = "10.1109/SiPhotonics60897.2024.10543877",

language = "English",

booktitle = "2024 IEEE Silicon Photonics Conference, SiPhotonics 2024",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2024 IEEE Silicon Photonics Conference, SiPhotonics 2024 ; Conference date: 15-04-2024 Through 18-04-2024",

}

van Lange, VT, Peeters, WHJ, Verheijen, MA , Van Hemert, MC , Bakkers, EPAM & Haverkort, JEM 2024, Direct Bandgap Type I Hexagonal Germanium/Silicon-Germanium Quantum Wells. in 2024 IEEE Silicon Photonics Conference, SiPhotonics 2024., 10543877, Institute of Electrical and Electronics Engineers, 2024 IEEE Silicon Photonics Conference, SiPhotonics 2024, Tokyo, Japan, 15/04/24. https://doi.org/10.1109/SiPhotonics60897.2024.10543877

Direct Bandgap Type I Hexagonal Germanium/Silicon-Germanium Quantum Wells. / van Lange, Victor T.; Peeters, Wouter H.J.; Verheijen, Marcel A. et al.
2024 IEEE Silicon Photonics Conference, SiPhotonics 2024. Institute of Electrical and Electronics Engineers, 2024. 10543877.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Direct Bandgap Type I Hexagonal Germanium/Silicon-Germanium Quantum Wells

AU - van Lange, Victor T.

AU - Peeters, Wouter H.J.

AU - Verheijen, Marcel A.

AU - Van Hemert, Max C.

AU - Bakkers, Erik P.A.M.

AU - Haverkort, Jos E.M.

PY - 2024/6/10

Y1 - 2024/6/10

N2 - We have investigated hexagonal Germanium/Silicon-Germanium nanowire quantum well heterostructures using photoluminescence. Bright light emission and varying quantum confinement with well thickness are observed which are characteristics indicative of a direct bandgap Type I nature of the hex-Ge/SiGe QW system.

AB - We have investigated hexagonal Germanium/Silicon-Germanium nanowire quantum well heterostructures using photoluminescence. Bright light emission and varying quantum confinement with well thickness are observed which are characteristics indicative of a direct bandgap Type I nature of the hex-Ge/SiGe QW system.

KW - hexagonal silicon-germanium

KW - quantum confinement

KW - quantum well

KW - Silicon photonics

UR - https://www.scopus.com/pages/publications/85196836137

U2 - 10.1109/SiPhotonics60897.2024.10543877

DO - 10.1109/SiPhotonics60897.2024.10543877

M3 - Conference contribution

AN - SCOPUS:85196836137

BT - 2024 IEEE Silicon Photonics Conference, SiPhotonics 2024

PB - Institute of Electrical and Electronics Engineers

T2 - 2024 IEEE Silicon Photonics Conference, SiPhotonics 2024

Y2 - 15 April 2024 through 18 April 2024

ER -

Direct Bandgap Type I Hexagonal Germanium/Silicon-Germanium Quantum Wells

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