Direct band gap wurtzite GaP nanowires for LEDs and quantum devices

S. Assali, D. Kriegner, I. Zardo, S. Plissard, M.A. Verheijen, J. Stangl, J.E.M. Haverkort, E.P.A.M. Bakkers

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Commercially available light-emitting diodes (LEDs) suffer from low-efficiency in the green region of the visible spectrum. In order to solve this issue III-V materials such as Gallium phosphide (GaP) can be investigated. GaP in the zinc blende (ZB) crystal structure has an indirect band gap, limiting the efficiency of the green emission. However, when the material is grown with wurtzite (WZ) crystal phase a direct band gap is predicted. Here, we show the fabrication and the characterization of wurtzite GaP nanowires, together with the demonstration of the direct band gap. The strong photoluminescence signal observed at 594 nm with a lifetime in the order of 1ns matches with the expectation for a direct band gap material. Furthermore, the emission wavelength can be tuned across a wide range of the visible spectrum (555-690 nm) by incorporating aluminum or arsenic in the WZ GaP nanowires.

Originele taal-2Engels
TitelNanoepitaxy: Materials and Devices VI
Aantal pagina's8
ISBN van geprinte versie978-1628412017
StatusGepubliceerd - 2014
EvenementNanoepitaxy: Materials and Devices VI - San Diego, Verenigde Staten van Amerika
Duur: 19 aug 201421 aug 2014

Publicatie series

NaamProceedings of SPIE
ISSN van geprinte versie0277-786X


CongresNanoepitaxy: Materials and Devices VI
LandVerenigde Staten van Amerika
StadSan Diego


Citeer dit

Assali, S., Kriegner, D., Zardo, I., Plissard, S., Verheijen, M. A., Stangl, J., ... Bakkers, E. P. A. M. (2014). Direct band gap wurtzite GaP nanowires for LEDs and quantum devices. In Nanoepitaxy: Materials and Devices VI (blz. 1-8). [917405] (Proceedings of SPIE; Vol. 9174). SPIE.