Direct band bap wurtzite semiconductor nanowires

S. Assali (Uitvinder), I. Zardo (Uitvinder), J.E.M. Haverkort (Uitvinder), E.P.A.M. Bakkers (Uitvinder)

Onderzoeksoutput: OctrooiOctrooi-publicatie

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Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.
Originele taal-2Engels
OctrooinummerUS2014230720
StatusGepubliceerd - 21 aug 2014

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