Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy

I.M.P. Aarts; B. Hoex; A.H.M. Smets; R.A.H. Engeln; W.M.M. Kessels; M.C.M. Sanden, van de

doi:10.1063/1.1713047

Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy

I.M.P. Aarts, B. Hoex, A.H.M. Smets, R.A.H. Engeln, W.M.M. Kessels, M.C.M. Sanden, van de

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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Cavity ringdown spectroscopy has been applied to hydrogenated amorphous silicon (a-Si:H) showing that this fully optical method is suited for the detection of defect-related absorption in thin films with a minimal detectable absorption of 1×10–6 per laser pulse and without the need for a calibration procedure. Absolute absorption coefficient spectra for photon energies between 0.7 and 1.7 eV have been obtained for thin a-Si:H films (4–98 nm) revealing a different spectral dependence for defects located in the bulk and in the surface/interface region of a-Si:H.

Originele taal-2	Engels
Pagina's (van-tot)	3079-3081
Tijdschrift	Applied Physics Letters
Volume	84
Nummer van het tijdschrift	16
DOI's	https://doi.org/10.1063/1.1713047
Status	Gepubliceerd - 2004

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title = "Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy",

abstract = "Cavity ringdown spectroscopy has been applied to hydrogenated amorphous silicon (a-Si:H) showing that this fully optical method is suited for the detection of defect-related absorption in thin films with a minimal detectable absorption of 1×10–6 per laser pulse and without the need for a calibration procedure. Absolute absorption coefficient spectra for photon energies between 0.7 and 1.7 eV have been obtained for thin a-Si:H films (4–98 nm) revealing a different spectral dependence for defects located in the bulk and in the surface/interface region of a-Si:H.",

author = "I.M.P. Aarts and B. Hoex and A.H.M. Smets and R.A.H. Engeln and W.M.M. Kessels and {Sanden, van de}, M.C.M.",

year = "2004",

doi = "10.1063/1.1713047",

language = "English",

volume = "84",

pages = "3079--3081",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy. / Aarts, I.M.P.; Hoex, B.; Smets, A.H.M.; Engeln, R.A.H.; Kessels, W.M.M.; Sanden, van de, M.C.M.

In: Applied Physics Letters, Vol. 84, Nr. 16, 2004, blz. 3079-3081.

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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T1 - Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy

AU - Aarts, I.M.P.

AU - Hoex, B.

AU - Smets, A.H.M.

AU - Engeln, R.A.H.

AU - Kessels, W.M.M.

AU - Sanden, van de, M.C.M.

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N2 - Cavity ringdown spectroscopy has been applied to hydrogenated amorphous silicon (a-Si:H) showing that this fully optical method is suited for the detection of defect-related absorption in thin films with a minimal detectable absorption of 1×10–6 per laser pulse and without the need for a calibration procedure. Absolute absorption coefficient spectra for photon energies between 0.7 and 1.7 eV have been obtained for thin a-Si:H films (4–98 nm) revealing a different spectral dependence for defects located in the bulk and in the surface/interface region of a-Si:H.

AB - Cavity ringdown spectroscopy has been applied to hydrogenated amorphous silicon (a-Si:H) showing that this fully optical method is suited for the detection of defect-related absorption in thin films with a minimal detectable absorption of 1×10–6 per laser pulse and without the need for a calibration procedure. Absolute absorption coefficient spectra for photon energies between 0.7 and 1.7 eV have been obtained for thin a-Si:H films (4–98 nm) revealing a different spectral dependence for defects located in the bulk and in the surface/interface region of a-Si:H.

U2 - 10.1063/1.1713047

DO - 10.1063/1.1713047

M3 - Article

VL - 84

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EP - 3081

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy

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