Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy

I.M.P. Aarts, B. Hoex, A.H.M. Smets, R.A.H. Engeln, W.M.M. Kessels, M.C.M. Sanden, van de

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Samenvatting

Cavity ringdown spectroscopy has been applied to hydrogenated amorphous silicon (a-Si:H) showing that this fully optical method is suited for the detection of defect-related absorption in thin films with a minimal detectable absorption of 1×10–6 per laser pulse and without the need for a calibration procedure. Absolute absorption coefficient spectra for photon energies between 0.7 and 1.7 eV have been obtained for thin a-Si:H films (4–98 nm) revealing a different spectral dependence for defects located in the bulk and in the surface/interface region of a-Si:H.
Originele taal-2Engels
Pagina's (van-tot)3079-3081
TijdschriftApplied Physics Letters
Volume84
Nummer van het tijdschrift16
DOI's
StatusGepubliceerd - 2004

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