Diffusion suppression in silicon by substitutional C doping

N. E.B. Cowern; B. Colombeau; F. Roozeboom; M. Hopstaken; H. Snijders; P. Meunier-Beillard; W. Lerch

doi:10.1109/ESSDERC.2002.194905

Diffusion suppression in silicon by substitutional C doping

N. E.B. Cowern, B. Colombeau, F. Roozeboom, M. Hopstaken, H. Snijders, P. Meunier-Beillard, W. Lerch

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

6 Citaten (Scopus)

Samenvatting

The role of C as a suppressor of B, P, and In diffusion is widely known but the mechanisms involved are still poorly understood. This paper presents novel results on the diffusion of C at the nanometer scale, which clearly show that the suppression of diffusion arises from the expulsion of interstitials from the Cdoped region, caused by long-range migration of interstitial C atoms. Fundamental parameters for C diffusion (migration frequency and jump length) are presented and compared with existing data for B diffusion, and the results are placed in the context of a unified model of impurity diffusion.

Originele taal-2	Engels
Titel	European Solid-State Device Research Conference
Plaats van productie	Piscataway
Uitgeverij	IEEE Computer Society
Pagina's	203-206
Aantal pagina's	4
ISBN van geprinte versie	8890084782
DOI's	https://doi.org/10.1109/ESSDERC.2002.194905
Status	Gepubliceerd - 1 jan. 2002
Extern gepubliceerd	Ja
Evenement	32nd European Solid-State Device Research Conference (ESSDERC 2002) - Firenze, Italië Duur: 24 sep. 2002 → 26 sep. 2002 Congresnummer: 32

Congres

Congres	32nd European Solid-State Device Research Conference (ESSDERC 2002)
Verkorte titel	ESSDERC 2002
Land/Regio	Italië
Stad	Firenze
Periode	24/09/02 → 26/09/02

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@inproceedings{98f6c340bbcf4a8ea8ac41ecc38bccec,

title = "Diffusion suppression in silicon by substitutional C doping",

abstract = "The role of C as a suppressor of B, P, and In diffusion is widely known but the mechanisms involved are still poorly understood. This paper presents novel results on the diffusion of C at the nanometer scale, which clearly show that the suppression of diffusion arises from the expulsion of interstitials from the Cdoped region, caused by long-range migration of interstitial C atoms. Fundamental parameters for C diffusion (migration frequency and jump length) are presented and compared with existing data for B diffusion, and the results are placed in the context of a unified model of impurity diffusion.",

author = "Cowern, {N. E.B.} and B. Colombeau and F. Roozeboom and M. Hopstaken and H. Snijders and P. Meunier-Beillard and W. Lerch",

year = "2002",

month = jan,

day = "1",

doi = "10.1109/ESSDERC.2002.194905",

language = "English",

isbn = "8890084782",

pages = "203--206",

booktitle = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

address = "United States",

note = "32nd European Solid-State Device Research Conference (ESSDERC 2002), ESSDERC 2002 ; Conference date: 24-09-2002 Through 26-09-2002",

}

Cowern, NEB, Colombeau, B, Roozeboom, F, Hopstaken, M, Snijders, H, Meunier-Beillard, P & Lerch, W 2002, Diffusion suppression in silicon by substitutional C doping. in European Solid-State Device Research Conference. IEEE Computer Society, Piscataway, blz. 203-206, 32nd European Solid-State Device Research Conference (ESSDERC 2002), Firenze, Italië, 24/09/02. https://doi.org/10.1109/ESSDERC.2002.194905

TY - GEN

T1 - Diffusion suppression in silicon by substitutional C doping

AU - Cowern, N. E.B.

AU - Colombeau, B.

AU - Roozeboom, F.

AU - Hopstaken, M.

AU - Snijders, H.

AU - Meunier-Beillard, P.

AU - Lerch, W.

N1 - Conference code: 32

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The role of C as a suppressor of B, P, and In diffusion is widely known but the mechanisms involved are still poorly understood. This paper presents novel results on the diffusion of C at the nanometer scale, which clearly show that the suppression of diffusion arises from the expulsion of interstitials from the Cdoped region, caused by long-range migration of interstitial C atoms. Fundamental parameters for C diffusion (migration frequency and jump length) are presented and compared with existing data for B diffusion, and the results are placed in the context of a unified model of impurity diffusion.

AB - The role of C as a suppressor of B, P, and In diffusion is widely known but the mechanisms involved are still poorly understood. This paper presents novel results on the diffusion of C at the nanometer scale, which clearly show that the suppression of diffusion arises from the expulsion of interstitials from the Cdoped region, caused by long-range migration of interstitial C atoms. Fundamental parameters for C diffusion (migration frequency and jump length) are presented and compared with existing data for B diffusion, and the results are placed in the context of a unified model of impurity diffusion.

UR - http://www.scopus.com/inward/record.url?scp=84907694492&partnerID=8YFLogxK

U2 - 10.1109/ESSDERC.2002.194905

DO - 10.1109/ESSDERC.2002.194905

M3 - Conference contribution

AN - SCOPUS:84907694492

SN - 8890084782

SP - 203

EP - 206

BT - European Solid-State Device Research Conference

PB - IEEE Computer Society

CY - Piscataway

T2 - 32nd European Solid-State Device Research Conference (ESSDERC 2002)

Y2 - 24 September 2002 through 26 September 2002

ER -

Diffusion suppression in silicon by substitutional C doping

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