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Deuterium retention in recrystallized tungsten exposed to high-flux plasma with fluences up to 1 × 1029 m−2

  • Yi Wen Sun
  • , Hao Yin
  • , Han Feng Song
  • , Jun Wang
  • , Han Qing Wang
  • , Long Cheng (Corresponding author)
  • , Yue Yuan
  • , Hai Shan Zhou
  • , Thomas Schwarz-Selinger
  • , T.W. Morgan
  • , Guang Hong Lu (Corresponding author)

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

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Samenvatting

Plasma fluence at the divertor of a future magnetic confinement fusion device can accumulate up to ∼1028-1029 m−2 per year. Yet hydrogen isotope (HI) retention under such high-fluence plasma exposure has been rarely reported. To investigate deuterium (D) retention in tungsten (W) exposed to such high-fluence plasma, a series of high-flux D plasma exposures were preformed using recrystallized W samples at ∼500 K in Magnum-PSI. The highest fluence achieved was ∼1 × 1029 m−2. Surface morphology observations indicate an initial increase in the number of blisters at the sample surface with increasing fluence, followed by saturation at ∼1 × 1029 m−2. Multiple bursts of blisters with open cracks or edges were observed under the two highest fluences of ∼1 × 1028 m−2 and ∼1 × 1029 m−2. 3He nuclear reaction analysis (NRA) shows a maximum D concentration up to 0.012 at.fr., distributed within the first 4 μm from the sample surface under the highest fluence. D retention, as measured by NRA and thermal desorption spectroscopy, tends to saturate with increasing fluence. Simulations of D2 thermal desorption, performed using the TMAP rate equation code, show a maximum D trapping depth of ∼10 μm, consistent with the defect depth profile revealed by transmission electron microscopy. D retention saturation observed in this work is attributed to the sample surface morphology modifications and the saturation of plasma-induced defects. This investigation provides a valuable reference for understanding the evolution of total HI retention in W under high-fluence plasma exposure in future fusion devices.

Originele taal-2Engels
Artikelnummer046030
Aantal pagina's11
TijdschriftNuclear Fusion
Volume65
Nummer van het tijdschrift4
DOI's
StatusGepubliceerd - 1 apr. 2025

Bibliografische nota

Publisher Copyright:
© 2025 The Author(s). Published by IOP Publishing Ltd on behalf of the IAEA.

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