Determination of the strain status of GaAs/AlAs quantum wires and quantum dots

A.A. Darhuber, G. Bauer, P.D. Wang, Y.P. Song, C.M. Sotomayor Torres, M.C. Holland

    Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review


    We have investigated periodic arrays of 150 and 175 nm wide GaAs-AlAs quantum wires and quantum dots, fabricated by electron beam lithography and SiCI4/O2 reactive ion etching, by means of reciprocal space mapping using triple axis x-ray diffractometry (TAD). The reciprocal space maps reveal that after the fabrication process the lattice constant along the growth direction slightly increases for the wires and even more so for the dots.
    Originele taal-2Engels
    TitelPolymer/inorganic interfaces : symposium, 2nd, held April 18-20, 1995, San Francisco, California, U.S.A.
    RedacteurenL.T. Drzal
    Plaats van productiePittsburgh
    UitgeverijMaterials Research Society
    ISBN van geprinte versie1-55899-288-X
    StatusGepubliceerd - 1995

    Publicatie series

    NaamMaterials Research Society symposium proceedings
    ISSN van geprinte versie0272-9172


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