@inproceedings{81268b6c5569423db24e0c88b39b8a51,
title = "Detection of SiH3 radicals and cluster formation in a highly H2 diluted SiH4 VHF plasma by means of time resolved cavity ring down spectroscopy",
abstract = "The spatial distribution of the SiH3 radicals between the electrodes of a H dild. silane VHF plasma under thin film hydrogenated microcryst. Si (micro c-Si:H) growth conditions was measured using the time resolved cavity ring-down (t-CRD) absorption spectroscopy technique. The micro c-Si:H growth rate is estd. from the measured spatial SiH3 profiles using a simple model based upon diffusion controlled flux of SiH3 radicals to the electrode surface, where the SiH3 can react with the film surface. The calcd. value of micro c-Si:H growth rate roughly agrees with the value of the exptl. detd. growth rate. This agreement implies that the SiH3 radical is the main growth contributor to the micro c-Si:H growth. Also, the t-CRD reveals the growth kinetics of the clusters in the plasma by light scattering at these clusters on time scales of 1 s after the plasma ignition. [on SciFinder (R)]",
author = "Takehiko Nagai and A.H.M. Smets and M. Kondo",
year = "2007",
language = "English",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "219--224",
booktitle = "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2006",
address = "United States",
}