Design paradigm of 30dBm power amplifier in SiGe

R. Mahmoudi; J.A.J. Essing; D.M.W. Leenaerts

Design paradigm of 30dBm power amplifier in SiGe

R. Mahmoudi, J.A.J. Essing, D.M.W. Leenaerts

Onderzoeksoutput: Bijdrage aan congres › Other › Academic

Originele taal-2	Engels
Aantal pagina's	42
Status	Gepubliceerd - 2012
Evenement	Radio Frequency Integrated Circuits Symposium (RFIC), workshop on towards Watt-Level mm-Wave Efficient Silicon Power Amplifiers, Montréal, Canada - Montréal, Canada Duur: 17 jun. 2012 → 17 jun. 2012

Workshop

Workshop	Radio Frequency Integrated Circuits Symposium (RFIC), workshop on towards Watt-Level mm-Wave Efficient Silicon Power Amplifiers, Montréal, Canada
Land/Regio	Canada
Stad	Montréal
Periode	17/06/12 → 17/06/12
Ander	Radio Frequency Integrated Circuits Symposium (RFIC), workshop on towards Watt-Level mm-Wave Efficient Silicon Power Amplifiers

Citeer dit

@conference{1a9b7fdde19e47789026f02429d29f27,

title = "Design paradigm of 30dBm power amplifier in SiGe",

author = "R. Mahmoudi and J.A.J. Essing and D.M.W. Leenaerts",

year = "2012",

language = "English",

note = "Towards Watt-Level mm-Wave Efficient Silicon Power Amplifiers, June 17, 2012, Montr{\'e}al, Canada ; Conference date: 17-06-2012 Through 17-06-2012",

}