Design of monolithically integrated InGaAsP/InP passively-modelocked linear quantum well lasers in an active-passive integration scheme

V. Moskalenko, A. Pellacani, J. Javaloyes, M.K. Smit, E.A.J.M. Bente

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademic

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In this paper simulation results of Fabry-Perot mode-locked lasers are presented that are based on measured modal gain data of InGaAsP quantum well optical amplifiers. Gain spectra were measured for various values of injected current density. The gain spectra were fitted to an analytical formula to describe the spectra using a few parameters. These were used as input parameters in a series of simulations of mode-locked lasers. The performance of three-section passively mode-locked lasers (amplifier, saturable absorber and passive waveguide) was studied for various lengths of the absorber and passive waveguide sections as well as various reflectivity values of the resonator mirrors.
Originele taal-2Engels
TitelProceedings of the 2012 Annual Symposium of the IEEE Photonics Society Benelux Chapter, 29-30 November 2012, Mons, Belgium
RedacteurenM. Wuilpart, C. Caucheteur, M. Mura
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's283-286
ISBN van geprinte versie978-2-8052-0184-4
StatusGepubliceerd - 2012

Vingerafdruk

quantum well lasers
absorbers
waveguides
lasers
light amplifiers
simulation
amplifiers
resonators
quantum wells
mirrors
current density
reflectance

Citeer dit

Moskalenko, V., Pellacani, A., Javaloyes, J., Smit, M. K., & Bente, E. A. J. M. (2012). Design of monolithically integrated InGaAsP/InP passively-modelocked linear quantum well lasers in an active-passive integration scheme. In M. Wuilpart, C. Caucheteur, & M. Mura (editors), Proceedings of the 2012 Annual Symposium of the IEEE Photonics Society Benelux Chapter, 29-30 November 2012, Mons, Belgium (blz. 283-286). Piscataway: Institute of Electrical and Electronics Engineers.
Moskalenko, V. ; Pellacani, A. ; Javaloyes, J. ; Smit, M.K. ; Bente, E.A.J.M. / Design of monolithically integrated InGaAsP/InP passively-modelocked linear quantum well lasers in an active-passive integration scheme. Proceedings of the 2012 Annual Symposium of the IEEE Photonics Society Benelux Chapter, 29-30 November 2012, Mons, Belgium. redacteur / M. Wuilpart ; C. Caucheteur ; M. Mura. Piscataway : Institute of Electrical and Electronics Engineers, 2012. blz. 283-286
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abstract = "In this paper simulation results of Fabry-Perot mode-locked lasers are presented that are based on measured modal gain data of InGaAsP quantum well optical amplifiers. Gain spectra were measured for various values of injected current density. The gain spectra were fitted to an analytical formula to describe the spectra using a few parameters. These were used as input parameters in a series of simulations of mode-locked lasers. The performance of three-section passively mode-locked lasers (amplifier, saturable absorber and passive waveguide) was studied for various lengths of the absorber and passive waveguide sections as well as various reflectivity values of the resonator mirrors.",
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Moskalenko, V, Pellacani, A, Javaloyes, J, Smit, MK & Bente, EAJM 2012, Design of monolithically integrated InGaAsP/InP passively-modelocked linear quantum well lasers in an active-passive integration scheme. in M Wuilpart, C Caucheteur & M Mura (redactie), Proceedings of the 2012 Annual Symposium of the IEEE Photonics Society Benelux Chapter, 29-30 November 2012, Mons, Belgium. Institute of Electrical and Electronics Engineers, Piscataway, blz. 283-286.

Design of monolithically integrated InGaAsP/InP passively-modelocked linear quantum well lasers in an active-passive integration scheme. / Moskalenko, V.; Pellacani, A.; Javaloyes, J.; Smit, M.K.; Bente, E.A.J.M.

Proceedings of the 2012 Annual Symposium of the IEEE Photonics Society Benelux Chapter, 29-30 November 2012, Mons, Belgium. redactie / M. Wuilpart; C. Caucheteur; M. Mura. Piscataway : Institute of Electrical and Electronics Engineers, 2012. blz. 283-286.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademic

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N2 - In this paper simulation results of Fabry-Perot mode-locked lasers are presented that are based on measured modal gain data of InGaAsP quantum well optical amplifiers. Gain spectra were measured for various values of injected current density. The gain spectra were fitted to an analytical formula to describe the spectra using a few parameters. These were used as input parameters in a series of simulations of mode-locked lasers. The performance of three-section passively mode-locked lasers (amplifier, saturable absorber and passive waveguide) was studied for various lengths of the absorber and passive waveguide sections as well as various reflectivity values of the resonator mirrors.

AB - In this paper simulation results of Fabry-Perot mode-locked lasers are presented that are based on measured modal gain data of InGaAsP quantum well optical amplifiers. Gain spectra were measured for various values of injected current density. The gain spectra were fitted to an analytical formula to describe the spectra using a few parameters. These were used as input parameters in a series of simulations of mode-locked lasers. The performance of three-section passively mode-locked lasers (amplifier, saturable absorber and passive waveguide) was studied for various lengths of the absorber and passive waveguide sections as well as various reflectivity values of the resonator mirrors.

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BT - Proceedings of the 2012 Annual Symposium of the IEEE Photonics Society Benelux Chapter, 29-30 November 2012, Mons, Belgium

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Moskalenko V, Pellacani A, Javaloyes J, Smit MK, Bente EAJM. Design of monolithically integrated InGaAsP/InP passively-modelocked linear quantum well lasers in an active-passive integration scheme. In Wuilpart M, Caucheteur C, Mura M, redacteurs, Proceedings of the 2012 Annual Symposium of the IEEE Photonics Society Benelux Chapter, 29-30 November 2012, Mons, Belgium. Piscataway: Institute of Electrical and Electronics Engineers. 2012. blz. 283-286