Design of composite InAsP/InGaAs quantum wells for a 1.55 mu-m polarization independent semiconductor optical amplifier

J.E.M. Haverkort, B.H.P. Dorren, M. Kemerink, A.Y. Silov, J.H. Wolter

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

6 Citaten (Scopus)
56 Downloads (Pure)

Samenvatting

We investigate a composite InAsP/InGaAs quantum well in which an 8 nm tensile strained InGaAs well is surrounded by two compressively strained InAsP layers which feature a 70:30 conduction band offset ratio. The composite quantum well is found to provide a high TM differential gain. The InAsP layers provide strain compensation while simultaneously shifting the band gap to the relevant 1.55 µm wavelength region and increasing the electron confinement. Composite InAsP/InGaAs quantum wells are a promising candidate for realizing a polarization independent semiconductor optical amplifier at 1.55 µm.
Originele taal-2Engels
Pagina's (van-tot)2782-2784
Aantal pagina's2782
TijdschriftApplied Physics Letters
Volume75
Nummer van het tijdschrift18
DOI's
StatusGepubliceerd - 1999

Vingerafdruk Duik in de onderzoeksthema's van 'Design of composite InAsP/InGaAs quantum wells for a 1.55 mu-m polarization independent semiconductor optical amplifier'. Samen vormen ze een unieke vingerafdruk.

  • Citeer dit