Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module

P.G.M. Baltus, A. Bezooijen, van

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This paper describes the design considerations for RF power amplifiers in general, including trends in systems, linearity and efficiency, the PA environment, implementation is sues and technology. As an example a triple-band (900/1800/1900MHz) dual mode (GSMIEdge) power amplifier module is described in this article. The RF transistors and biasing circuitry are implemented in silicon bipolar technology. A multi-layer LTCC substrate is used as carrier.
Originele taal-2Engels
TitelAnalog Circuit Design : Scalable Analog Circuit Design, High-Speed D/A Converters, RF Power Amplifiers
RedacteurenJ.H. Huijsing, M. Steyaert, A.H.M. Roermund, van
Plaats van productieDordrecht
UitgeverijKluwer Academic Publishers
Pagina's249-268
Aantal pagina's20
ISBN van geprinte versie0-7923-7621-8, 978-0-7923-7621-7
DOI's
StatusGepubliceerd - 2002

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Baltus, P. G. M., & Bezooijen, van, A. (2002). Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module. In J. H. Huijsing, M. Steyaert, & A. H. M. Roermund, van (editors), Analog Circuit Design : Scalable Analog Circuit Design, High-Speed D/A Converters, RF Power Amplifiers (blz. 249-268). Dordrecht: Kluwer Academic Publishers. https://doi.org/10.1007/0-306-47950-8_13