Design and characterization of a sharp gaas/zn(Mn)se heterovalent interface: a sub-nanometer scale view

Davide F. Grossi; Sebastian Koelling; Pavel A. Yunin; Paul M. Koenraad; Grigory V. Klimko; Sergey V. Sorokin; Mikhail N. Drozdov; Sergey V. Ivanov; Alexey A. Toropov; Andrei Y. Silov

doi:10.3390/nano10071315

Design and characterization of a sharp gaas/zn(Mn)se heterovalent interface: a sub-nanometer scale view

Davide F. Grossi (Corresponding author)
, Sebastian Koelling
, Pavel A. Yunin
, Paul M. Koenraad
, Grigory V. Klimko
, Sergey V. Sorokin
, Mikhail N. Drozdov
, Sergey V. Ivanov
, Alexey A. Toropov
, Andrei Y. Silov (Corresponding author)

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.

Originele taal-2	Engels
Artikelnummer	1315
Aantal pagina's	11
Tijdschrift	Nanomaterials
Volume	10
Nummer van het tijdschrift	7
DOI's	https://doi.org/10.3390/nano10071315
Status	Gepubliceerd - jul. 2020

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Funding: D.F.G. acknowledges the support from the Dutch Foundation for Fundamental Research on Matter (FOM). P.M.Koenraad and A.Y.S. also acknowledges the financial support of the RSF (Project no. 14-42-00015) during their visit to the Ioffe Institute, when the idea behind the experiments was conceived and the samples were initially characterized.

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@article{0d9aae9c6ff04fa7b624dc91c8941feb,

title = "Design and characterization of a sharp gaas/zn(Mn)se heterovalent interface: a sub-nanometer scale view",

abstract = "The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.",

keywords = "Diffusion, Diluted magnetic semiconductors, Dopants, Mn impurities, Segregation, ZnSe/GaAs interface",

author = "Grossi, \{Davide F.\} and Sebastian Koelling and Yunin, \{Pavel A.\} and Koenraad, \{Paul M.\} and Klimko, \{Grigory V.\} and Sorokin, \{Sergey V.\} and Drozdov, \{Mikhail N.\} and Ivanov, \{Sergey V.\} and Toropov, \{Alexey A.\} and Silov, \{Andrei Y.\}",

year = "2020",

month = jul,

doi = "10.3390/nano10071315",

language = "English",

volume = "10",

journal = "Nanomaterials",

issn = "2079-4991",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "7",

}

TY - JOUR

T1 - Design and characterization of a sharp gaas/zn(Mn)se heterovalent interface

T2 - a sub-nanometer scale view

AU - Grossi, Davide F.

AU - Koelling, Sebastian

AU - Yunin, Pavel A.

AU - Koenraad, Paul M.

AU - Klimko, Grigory V.

AU - Sorokin, Sergey V.

AU - Drozdov, Mikhail N.

AU - Ivanov, Sergey V.

AU - Toropov, Alexey A.

AU - Silov, Andrei Y.

PY - 2020/7

Y1 - 2020/7

N2 - The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.

AB - The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.

KW - Diffusion

KW - Diluted magnetic semiconductors

KW - Dopants

KW - Mn impurities

KW - Segregation

KW - ZnSe/GaAs interface

UR - https://www.scopus.com/pages/publications/85090695135

U2 - 10.3390/nano10071315

DO - 10.3390/nano10071315

M3 - Article

C2 - 32635471

AN - SCOPUS:85090695135

SN - 2079-4991

VL - 10

JO - Nanomaterials

JF - Nanomaterials

IS - 7

M1 - 1315

ER -

Design and characterization of a sharp gaas/zn(Mn)se heterovalent interface: a sub-nanometer scale view

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