Design and characterization of a sharp gaas/zn(Mn)se heterovalent interface: a sub-nanometer scale view

Davide F. Grossi; Sebastian Koelling; Pavel A. Yunin; Paul M. Koenraad; Grigory V. Klimko; Sergey V. Sorokin; Mikhail N. Drozdov; Sergey V. Ivanov; Alexey A. Toropov; Andrei Y. Silov

doi:10.3390/nano10071315

Design and characterization of a sharp gaas/zn(Mn)se heterovalent interface: a sub-nanometer scale view

Davide F. Grossi (Corresponding author), Sebastian Koelling, Pavel A. Yunin, Paul M. Koenraad, Grigory V. Klimko, Sergey V. Sorokin, Mikhail N. Drozdov, Sergey V. Ivanov, Alexey A. Toropov, Andrei Y. Silov (Corresponding author)

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.

Originele taal-2	Engels
Artikelnummer	1315
Aantal pagina's	11
Tijdschrift	Nanomaterials
Volume	10
Nummer van het tijdschrift	7
DOI's	https://doi.org/10.3390/nano10071315
Status	Gepubliceerd - jul. 2020

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@article{0d9aae9c6ff04fa7b624dc91c8941feb,

title = "Design and characterization of a sharp gaas/zn(Mn)se heterovalent interface: a sub-nanometer scale view",

abstract = "The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.",

keywords = "Diffusion, Diluted magnetic semiconductors, Dopants, Mn impurities, Segregation, ZnSe/GaAs interface",

author = "Grossi, {Davide F.} and Sebastian Koelling and Yunin, {Pavel A.} and Koenraad, {Paul M.} and Klimko, {Grigory V.} and Sorokin, {Sergey V.} and Drozdov, {Mikhail N.} and Ivanov, {Sergey V.} and Toropov, {Alexey A.} and Silov, {Andrei Y.}",

year = "2020",

month = jul,

doi = "10.3390/nano10071315",

language = "English",

volume = "10",

journal = "Nanomaterials",

issn = "2079-4991",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "7",

}

TY - JOUR

T1 - Design and characterization of a sharp gaas/zn(Mn)se heterovalent interface

T2 - a sub-nanometer scale view

AU - Grossi, Davide F.

AU - Koelling, Sebastian

AU - Yunin, Pavel A.

AU - Koenraad, Paul M.

AU - Klimko, Grigory V.

AU - Sorokin, Sergey V.

AU - Drozdov, Mikhail N.

AU - Ivanov, Sergey V.

AU - Toropov, Alexey A.

AU - Silov, Andrei Y.

PY - 2020/7

Y1 - 2020/7

N2 - The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.

AB - The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.

KW - Diffusion

KW - Diluted magnetic semiconductors

KW - Dopants

KW - Mn impurities

KW - Segregation

KW - ZnSe/GaAs interface

UR - http://www.scopus.com/inward/record.url?scp=85090695135&partnerID=8YFLogxK

U2 - 10.3390/nano10071315

DO - 10.3390/nano10071315

M3 - Article

C2 - 32635471

AN - SCOPUS:85090695135

SN - 2079-4991

VL - 10

JO - Nanomaterials

JF - Nanomaterials

IS - 7

M1 - 1315

ER -

Design and characterization of a sharp gaas/zn(Mn)se heterovalent interface: a sub-nanometer scale view

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