TY - JOUR
T1 - Design and Analysis of Novel O-Band Low Polarization Sensitive SOA Co-Integrated With Passive Waveguides for Optical Systems
AU - Rasoulzadehzali, Aref
AU - Stabile, Ripalta
AU - Calabretta, Nicola
PY - 2022/10
Y1 - 2022/10
N2 - Low polarization-dependent semiconductor optical amplifiers (SOAs) with an easy fabrication process and the capability to be co-integrated with passive elements are crucial in photonic integrated circuits. In this work, we design, simulate, and optimize a low polarization-dependent bulk SOA based on a novel layerstack with an unstrained bulk active layer with a robust and easy fabrication process that allows the co-integration with passive waveguides. The designed layerstack shows that the reflection between SOA and the passive waveguide is less than 1.3 × 10-5. Furthermore, by designing the ridge waveguide and layerstack (thickness of the core and cladding layers), the confinement factor of TE- and TM- modes (ГTE/TM) are engineered to be approximately the same. This results in a low polarization-dependent SOA (since for the active bulk layer, the material gain of TE-mode is very close to the material gain of TM-mode). Numerical assessment of different length SOAs in terms of gain, polarization-dependent gain (PDG), noise figure are extensively investigated. Moreover, a booster SOA (1100 μm) with higher output saturation power has been investigated by widening the width of SOA from 1 μm to 3 μm. The output saturation power at 10 kA/cm2 increases from +7.6 dBm to +13.9 dBm, when the width of the SOA waveguide increases from 1 μm to 3 μm. Finally, we discuss the fabrication tolerance on SOA characteristics. We show that the PDG strongly depends on the cladding layer thickness tolerance and decreases from 2.3 dB to 1.3 dB as it changes from 135 nm to 175 nm.
AB - Low polarization-dependent semiconductor optical amplifiers (SOAs) with an easy fabrication process and the capability to be co-integrated with passive elements are crucial in photonic integrated circuits. In this work, we design, simulate, and optimize a low polarization-dependent bulk SOA based on a novel layerstack with an unstrained bulk active layer with a robust and easy fabrication process that allows the co-integration with passive waveguides. The designed layerstack shows that the reflection between SOA and the passive waveguide is less than 1.3 × 10-5. Furthermore, by designing the ridge waveguide and layerstack (thickness of the core and cladding layers), the confinement factor of TE- and TM- modes (ГTE/TM) are engineered to be approximately the same. This results in a low polarization-dependent SOA (since for the active bulk layer, the material gain of TE-mode is very close to the material gain of TM-mode). Numerical assessment of different length SOAs in terms of gain, polarization-dependent gain (PDG), noise figure are extensively investigated. Moreover, a booster SOA (1100 μm) with higher output saturation power has been investigated by widening the width of SOA from 1 μm to 3 μm. The output saturation power at 10 kA/cm2 increases from +7.6 dBm to +13.9 dBm, when the width of the SOA waveguide increases from 1 μm to 3 μm. Finally, we discuss the fabrication tolerance on SOA characteristics. We show that the PDG strongly depends on the cladding layer thickness tolerance and decreases from 2.3 dB to 1.3 dB as it changes from 135 nm to 175 nm.
KW - Semiconductor optical amplifiers
KW - bulk layer
KW - low polarization sensitivity
KW - polarization-dependent gain
UR - http://www.scopus.com/inward/record.url?scp=85137586444&partnerID=8YFLogxK
U2 - 10.1109/JPHOT.2022.3200639
DO - 10.1109/JPHOT.2022.3200639
M3 - Article
SN - 1943-0655
VL - 14
JO - IEEE Photonics Journal
JF - IEEE Photonics Journal
IS - 5
M1 - 8451110
ER -