Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications

H.C.M. Knoops; L. Baggetto; E. Langereis; M.C.M. Sanden, van de; J.H. Klootwijk; F. Roozeboom; R.A.H. Niessen; P.H.L. Notten; W.M.M. Kessels

doi:10.1149/1.2779068

Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications

H.C.M. Knoops, L. Baggetto, E. Langereis, M.C.M. Sanden, van de, J.H. Klootwijk, F. Roozeboom, R.A.H. Niessen, P.H.L. Notten, W.M.M. Kessels

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4 Citaten (Scopus)

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TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations of Ta(N(CH3)2)5 precursor and H2 plasma and TiCl4 precursor and H2-N2 plasma, resp. Both the TaN and TiN films had a cubic phase compn. and films with a relatively low resistivity (TaN: 380 micro W cm; TiN: 150 micro W cm) were obtained. Dissimilar from the TiN properties, the material properties of the TaN films were found to depend strongly on the plasma conditions. Preliminary tests were carried out revealing the potential of the TaN and TiN films as copper and lithium diffusion barriers.

Originele taal-2	Engels
Titel	Proceedings of the 3th symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA
Redacteuren	A. Londergan, O. Straten, van der, S.F. Bent, J.W. Elam, S. Gendt, de, S.B. Kang
Plaats van productie	Pennington, New Jersey, USA
Uitgeverij	Electrochemical Society, Inc.
Pagina's	45-54
ISBN van geprinte versie	978-1-566-77573-1
DOI's	https://doi.org/10.1149/1.2779068
Status	Gepubliceerd - 2007
Evenement	212th Electrochemical Society Meeting (ECS 2007) - Hilton Washington, Washington, Verenigde Staten van Amerika Duur: 8 okt. 2007 → 9 okt. 2007 Congresnummer: 212 https://www.electrochem.org/212

Publicatie series

Naam	ECS Transactions
Volume	11
ISSN van geprinte versie	1938-6737

Congres

Congres	212th Electrochemical Society Meeting (ECS 2007)
Verkorte titel	ECS 2007
Land/Regio	Verenigde Staten van Amerika
Stad	Washington
Periode	8/10/07 → 9/10/07
Ander	212th ECS Meeting, Washington D.C., USA
Internet adres	https://www.electrochem.org/212

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10.1149/1.2779068

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Knoops, H. C. M., Baggetto, L., Langereis, E., Sanden, van de, M. C. M., Klootwijk, J. H., Roozeboom, F., Niessen, R. A. H., Notten, P. H. L., & Kessels, W. M. M. (2007). Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications. In A. Londergan, O. Straten, van der, S. F. Bent, J. W. Elam, S. Gendt, de, & S. B. Kang (editors), Proceedings of the 3th symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA (blz. 45-54). (ECS Transactions; Vol. 11). Electrochemical Society, Inc.. https://doi.org/10.1149/1.2779068

Knoops, H.C.M. ; Baggetto, L. ; Langereis, E. et al. / Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications. Proceedings of the 3th symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA. redacteur / A. Londergan ; O. Straten, van der ; S.F. Bent ; J.W. Elam ; S. Gendt, de ; S.B. Kang. Pennington, New Jersey, USA : Electrochemical Society, Inc., 2007. blz. 45-54 (ECS Transactions).

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title = "Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications",

abstract = "TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations of Ta(N(CH3)2)5 precursor and H2 plasma and TiCl4 precursor and H2-N2 plasma, resp. Both the TaN and TiN films had a cubic phase compn. and films with a relatively low resistivity (TaN: 380 micro W cm; TiN: 150 micro W cm) were obtained. Dissimilar from the TiN properties, the material properties of the TaN films were found to depend strongly on the plasma conditions. Preliminary tests were carried out revealing the potential of the TaN and TiN films as copper and lithium diffusion barriers.",

author = "H.C.M. Knoops and L. Baggetto and E. Langereis and {Sanden, van de}, M.C.M. and J.H. Klootwijk and F. Roozeboom and R.A.H. Niessen and P.H.L. Notten and W.M.M. Kessels",

year = "2007",

doi = "10.1149/1.2779068",

language = "English",

isbn = "978-1-566-77573-1",

series = "ECS Transactions",

publisher = "Electrochemical Society, Inc.",

pages = "45--54",

editor = "A. Londergan and {Straten, van der}, O. and S.F. Bent and J.W. Elam and {Gendt, de}, S. and S.B. Kang",

booktitle = "Proceedings of the 3th symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA",

address = "United States",

note = "212th Electrochemical Society Meeting (ECS 2007), ECS 2007 ; Conference date: 08-10-2007 Through 09-10-2007",

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Knoops, HCM, Baggetto, L, Langereis, E , Sanden, van de, MCM, Klootwijk, JH, Roozeboom, F, Niessen, RAH, Notten, PHL & Kessels, WMM 2007, Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications. in A Londergan, O Straten, van der, SF Bent, JW Elam, S Gendt, de & SB Kang (redactie), Proceedings of the 3th symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA. ECS Transactions, vol. 11, Electrochemical Society, Inc., Pennington, New Jersey, USA, blz. 45-54, 212th Electrochemical Society Meeting (ECS 2007), Washington, District of Columbia, Verenigde Staten van Amerika, 8/10/07. https://doi.org/10.1149/1.2779068

Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications. / Knoops, H.C.M.; Baggetto, L.; Langereis, E. et al.
Proceedings of the 3th symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA. redactie / A. Londergan; O. Straten, van der; S.F. Bent; J.W. Elam; S. Gendt, de; S.B. Kang. Pennington, New Jersey, USA: Electrochemical Society, Inc., 2007. blz. 45-54 (ECS Transactions; Vol. 11).

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications

AU - Knoops, H.C.M.

AU - Baggetto, L.

AU - Langereis, E.

AU - Sanden, van de, M.C.M.

AU - Klootwijk, J.H.

AU - Roozeboom, F.

AU - Niessen, R.A.H.

AU - Notten, P.H.L.

AU - Kessels, W.M.M.

N1 - Conference code: 212

PY - 2007

Y1 - 2007

N2 - TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations of Ta(N(CH3)2)5 precursor and H2 plasma and TiCl4 precursor and H2-N2 plasma, resp. Both the TaN and TiN films had a cubic phase compn. and films with a relatively low resistivity (TaN: 380 micro W cm; TiN: 150 micro W cm) were obtained. Dissimilar from the TiN properties, the material properties of the TaN films were found to depend strongly on the plasma conditions. Preliminary tests were carried out revealing the potential of the TaN and TiN films as copper and lithium diffusion barriers.

AB - TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations of Ta(N(CH3)2)5 precursor and H2 plasma and TiCl4 precursor and H2-N2 plasma, resp. Both the TaN and TiN films had a cubic phase compn. and films with a relatively low resistivity (TaN: 380 micro W cm; TiN: 150 micro W cm) were obtained. Dissimilar from the TiN properties, the material properties of the TaN films were found to depend strongly on the plasma conditions. Preliminary tests were carried out revealing the potential of the TaN and TiN films as copper and lithium diffusion barriers.

U2 - 10.1149/1.2779068

DO - 10.1149/1.2779068

M3 - Conference contribution

SN - 978-1-566-77573-1

T3 - ECS Transactions

SP - 45

EP - 54

BT - Proceedings of the 3th symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA

A2 - Londergan, A.

A2 - Straten, van der, O.

A2 - Bent, S.F.

A2 - Elam, J.W.

A2 - Gendt, de, S.

A2 - Kang, S.B.

PB - Electrochemical Society, Inc.

CY - Pennington, New Jersey, USA

T2 - 212th Electrochemical Society Meeting (ECS 2007)

Y2 - 8 October 2007 through 9 October 2007

ER -

Knoops HCM, Baggetto L, Langereis E , Sanden, van de MCM, Klootwijk JH, Roozeboom F et al. Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications. In Londergan A, Straten, van der O, Bent SF, Elam JW, Gendt, de S, Kang SB, redacteurs, Proceedings of the 3th symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA. Pennington, New Jersey, USA: Electrochemical Society, Inc. 2007. blz. 45-54. (ECS Transactions). doi: 10.1149/1.2779068

Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications

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