Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications

H.C.M. Knoops, L. Baggetto, E. Langereis, M.C.M. Sanden, van de, J.H. Klootwijk, F. Roozeboom, R.A.H. Niessen, P.H.L. Notten, W.M.M. Kessels

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

4 Citaten (Scopus)

Samenvatting

TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations of Ta(N(CH3)2)5 precursor and H2 plasma and TiCl4 precursor and H2-N2 plasma, resp. Both the TaN and TiN films had a cubic phase compn. and films with a relatively low resistivity (TaN: 380 micro W cm; TiN: 150 micro W cm) were obtained. Dissimilar from the TiN properties, the material properties of the TaN films were found to depend strongly on the plasma conditions. Preliminary tests were carried out revealing the potential of the TaN and TiN films as copper and lithium diffusion barriers.
Originele taal-2Engels
TitelProceedings of the 3th symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA
RedacteurenA. Londergan, O. Straten, van der, S.F. Bent, J.W. Elam, S. Gendt, de, S.B. Kang
Plaats van productiePennington, New Jersey, USA
UitgeverijElectrochemical Society, Inc.
Pagina's45-54
ISBN van geprinte versie978-1-566-77573-1
DOI's
StatusGepubliceerd - 2007
Evenement212th Electrochemical Society Meeting (ECS 2007) - Hilton Washington, Washington, Verenigde Staten van Amerika
Duur: 8 okt 20079 okt 2007
Congresnummer: 212
https://www.electrochem.org/212

Publicatie series

NaamECS Transactions
Volume11
ISSN van geprinte versie1938-6737

Congres

Congres212th Electrochemical Society Meeting (ECS 2007)
Verkorte titelECS 2007
LandVerenigde Staten van Amerika
StadWashington
Periode8/10/079/10/07
Ander212th ECS Meeting, Washington D.C., USA
Internet adres

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