Deposition of a-Si:H using a supersonically expanding argon plasma

G.J. Meeusen, Z. Qing, A.T.M. Wilbers, D.C. Schram

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

Amorphous Hydrogenated Silicon (a-Si:H) is a material that is widely used in the field of solar cells and other optoelectronics. The only method available to produce high quality a-Si:H is by means of plasma enhanced chemical vapor deposition (PECVD). Radicals responsible for deposition diffuse from a glow discharge toward a substrate that is heated up to 600 K where a layer grows with a speed of typically 0.1 nm/s. The deposition rate is limited because of transport is diffusion determined. An increase of this deposition rate and material efficiency can be expected if the radicals are transported toward the substrate using another transport mechanism.

Originele taal-2Engels
TitelThin film physics and applications (TFPA) : international conference, Shanghai, China, 15-17 April 1991
RedacteurenShixun Zhou, Yongling Wang
Plaats van productieBellingham
UitgeverijSPIE
Pagina's252-257
Aantal pagina's6
Volume1
ISBN van geprinte versie0819406465
DOI's
StatusGepubliceerd - 1 dec 1991
EvenementInternational Conference on Thin Film Physics and Applications - '91 TFPA - Shanghai, China
Duur: 15 apr 199117 apr 1991

Publicatie series

NaamProceedings of SPIE
Volume1519
ISSN van geprinte versie0277-786X

Congres

CongresInternational Conference on Thin Film Physics and Applications - '91 TFPA
StadShanghai, China
Periode15/04/9117/04/91

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