Depletion-type thin-film transistors with a ferroelectric insulator

M.W.J. Prins; S.E. Zinnemers; J.F.M. Cillessen; J.B. Giesbers

doi:10.1063/1.118180

Depletion-type thin-film transistors with a ferroelectric insulator

M.W.J. Prins, S.E. Zinnemers, J.F.M. Cillessen, J.B. Giesbers

Molecular Biosensing

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We present a study of electrical characteristics of ferroelectric field-effect transistors made of PbZr0.2Ti0.8O3 and SnO2:Sb thin films. Due to properly chosen semiconductor parameters, the transistor channel can be totally depleted by the ferroelectric charge displacement. The observed remnant on/off ratio of the channel current amounts to 7×103. Pulse response measurements give information on data retention, device speed, and the occurrence of charge injection. The results lead to important design considerations for ferroelectric transistors.

Originele taal-2	Engels
Pagina's (van-tot)	458-460
Aantal pagina's	3
Tijdschrift	Applied Physics Letters
Volume	70
Nummer van het tijdschrift	4
DOI's	https://doi.org/10.1063/1.118180
Status	Gepubliceerd - 1997

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abstract = "We present a study of electrical characteristics of ferroelectric field-effect transistors made of PbZr0.2Ti0.8O3 and SnO2:Sb thin films. Due to properly chosen semiconductor parameters, the transistor channel can be totally depleted by the ferroelectric charge displacement. The observed remnant on/off ratio of the channel current amounts to 7×103. Pulse response measurements give information on data retention, device speed, and the occurrence of charge injection. The results lead to important design considerations for ferroelectric transistors.",

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AB - We present a study of electrical characteristics of ferroelectric field-effect transistors made of PbZr0.2Ti0.8O3 and SnO2:Sb thin films. Due to properly chosen semiconductor parameters, the transistor channel can be totally depleted by the ferroelectric charge displacement. The observed remnant on/off ratio of the channel current amounts to 7×103. Pulse response measurements give information on data retention, device speed, and the occurrence of charge injection. The results lead to important design considerations for ferroelectric transistors.

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Depletion-type thin-film transistors with a ferroelectric insulator

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