Samenvatting
We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or defocusing of carriers in the depletion region.
Originele taal-2 | Engels |
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Pagina's (van-tot) | 297-299 |
Aantal pagina's | 3 |
Tijdschrift | Physica B: Condensed Matter |
Volume | 218 |
Nummer van het tijdschrift | 1-4 |
DOI's | |
Status | Gepubliceerd - 1996 |