Dependence of spin-asymmetry in the Shubnikov-de Haas resistance on back-gating, illumination and uniaxial stress

P.M. Koenraad, F.A.P. Blom, P.A.M. Blom, C.T. Foxon, E.N.M. Frijns, J.J. Harris, G. Weimann, J.H. Wolter

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Samenvatting

We present measurements of the Shubnikov-de Haas (SdH) resistivity on GaAs/AlGaAs heterojunctions. We compare measurements in which in the same sample the electron density was increased to the same value either by applying a back-gate voltage or illumination. We conclude that both the overlap of the electron wavefunctions in the two-dimensional electron gas with positive and negative scattering centers and the number of positive and negative scatterers determine the asymmetry in the SdH-peaks. The asymmetry in the SdH-peaks depends on the electron density because the scattering on remote and background impurities have a different electron density dependence. After illumination the neutralization rate of the acceptors in the GaAs determines whether the asymmetry increases or decreases. We show that the asymmetry of the SdH-peaks can also be modified by applying uniaxial stress.
Originele taal-2Engels
Pagina's (van-tot)519-522
TijdschriftSuperlattices and Microstructures
Volume5
Nummer van het tijdschrift4
DOI's
StatusGepubliceerd - 1989

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