Demonstrating the potential of accurate absolute cross-grain stress and orientation correlation using electron backscatter diffraction

Tijmen Vermeij, Marc De Graef, Johan Hoefnagels (Corresponding author)

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

5 Citaties (Scopus)
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Uittreksel

We report a first exploration of High-angular-Resolution Electron Backscatter Diffraction, without using simulated Electron Backscatter Diffraction patterns as a reference, for absolute stress and orientation measurements in polycrystalline materials. By co-correlating the pattern center and fully exploiting crystal symmetry and plane-stress, simultaneous correlation of all overlapping regions of interest in multiple direct-electron-detector, energy-filtered Electron Backscatter Diffraction patterns is achieved. The potential for highly accurate measurement of absolute stress, crystal orientation and pattern center is demonstrated on a virtual polycrystalline case-study, showing errors respectively below 20 MPa (or 10−4 in strain), 7 × 10−5 rad and 0.06 pixels.

Originele taal-2Engels
Pagina's (van-tot)266-271
Aantal pagina's6
TijdschriftScripta Materialia
Volume162
DOI's
StatusGepubliceerd - 15 mrt 2019

Vingerafdruk

Electron diffraction
diffraction patterns
electron counters
Crystal orientation
Diffraction patterns
plane stress
stress measurement
angular resolution
diffraction
crystals
Polycrystalline materials
electrons
pixels
Crystal symmetry
electron energy
high resolution
symmetry
Pixels
Detectors
Electrons

Citeer dit

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abstract = "We report a first exploration of High-angular-Resolution Electron Backscatter Diffraction, without using simulated Electron Backscatter Diffraction patterns as a reference, for absolute stress and orientation measurements in polycrystalline materials. By co-correlating the pattern center and fully exploiting crystal symmetry and plane-stress, simultaneous correlation of all overlapping regions of interest in multiple direct-electron-detector, energy-filtered Electron Backscatter Diffraction patterns is achieved. The potential for highly accurate measurement of absolute stress, crystal orientation and pattern center is demonstrated on a virtual polycrystalline case-study, showing errors respectively below 20 MPa (or 10−4 in strain), 7 × 10−5 rad and 0.06 pixels.",
keywords = "Absolute stress, Crystal symmetry, EBSD, Grain boundaries, HR-EBSD, Pattern center",
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Demonstrating the potential of accurate absolute cross-grain stress and orientation correlation using electron backscatter diffraction. / Vermeij, Tijmen; De Graef, Marc; Hoefnagels, Johan (Corresponding author).

In: Scripta Materialia, Vol. 162, 15.03.2019, blz. 266-271.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

TY - JOUR

T1 - Demonstrating the potential of accurate absolute cross-grain stress and orientation correlation using electron backscatter diffraction

AU - Vermeij, Tijmen

AU - De Graef, Marc

AU - Hoefnagels, Johan

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Y1 - 2019/3/15

N2 - We report a first exploration of High-angular-Resolution Electron Backscatter Diffraction, without using simulated Electron Backscatter Diffraction patterns as a reference, for absolute stress and orientation measurements in polycrystalline materials. By co-correlating the pattern center and fully exploiting crystal symmetry and plane-stress, simultaneous correlation of all overlapping regions of interest in multiple direct-electron-detector, energy-filtered Electron Backscatter Diffraction patterns is achieved. The potential for highly accurate measurement of absolute stress, crystal orientation and pattern center is demonstrated on a virtual polycrystalline case-study, showing errors respectively below 20 MPa (or 10−4 in strain), 7 × 10−5 rad and 0.06 pixels.

AB - We report a first exploration of High-angular-Resolution Electron Backscatter Diffraction, without using simulated Electron Backscatter Diffraction patterns as a reference, for absolute stress and orientation measurements in polycrystalline materials. By co-correlating the pattern center and fully exploiting crystal symmetry and plane-stress, simultaneous correlation of all overlapping regions of interest in multiple direct-electron-detector, energy-filtered Electron Backscatter Diffraction patterns is achieved. The potential for highly accurate measurement of absolute stress, crystal orientation and pattern center is demonstrated on a virtual polycrystalline case-study, showing errors respectively below 20 MPa (or 10−4 in strain), 7 × 10−5 rad and 0.06 pixels.

KW - Absolute stress

KW - Crystal symmetry

KW - EBSD

KW - Grain boundaries

KW - HR-EBSD

KW - Pattern center

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DO - 10.1016/j.scriptamat.2018.11.030

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