Deep UV lithography process in generic InP integration for arrayed waveguide gratings

J. Bolk, H. Ambrosius, R. Stabile, S. Latkowski, X. Leijtens, E. Bitincka, L. Augustin, D. Marsan, J. Darracq, K. Williams

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

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Samenvatting

Low-excess-loss arrayed waveguide gratings are enabled by unique application of deep UV lithography in InP integrated photonics through reduced feature sizes and, more specifically, well-resolved inter-waveguide gap dimensions. Submicrometer wafer-flatness is shown to be required to achieve the critical dimension uniformity better than 10 nm on 3-in substrates. Arrayed waveguide grating devices were fabricated and the effect of inter-waveguide gap scaling on the excess losses was measured and compared to simulations. Excess losses down to 0.15 dB were demonstrated to be lower than predicted with the 2-D simulations. The tapering of the etch depth inside the gaps due to the lag effect of the etch process may explain the improvements.

Originele taal-2Engels
Pagina's (van-tot)1222-1225
Aantal pagina's4
TijdschriftIEEE Photonics Technology Letters
Volume30
Nummer van het tijdschrift13
DOI's
StatusGepubliceerd - 1 jul 2018

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