TY - JOUR
T1 - Current-voltage relation for abrupt N+-P-N+ and N-i-N structures
AU - Bakker, J.G.C.
AU - Bisschop, J.
AU - Schilders, W.H.A.
PY - 1992
Y1 - 1992
N2 - Numerical simulations of abrupt N-P-N structures with homogeneously doped layers show a systematic deviation from the analytical formulae, due to the application of the depletion approximation. The error in the depletion approximation, as a function of barrier doping, is found to reach a maximum in the limit of an intrinsic barrier region. The potential and charge distribution in the static N-i-N structure, including the effects of the charge distribution at the N-sides, is calculated analytically. For this structure a linear current-voltage relation is derived, and found in agreement with numerical results.
AB - Numerical simulations of abrupt N-P-N structures with homogeneously doped layers show a systematic deviation from the analytical formulae, due to the application of the depletion approximation. The error in the depletion approximation, as a function of barrier doping, is found to reach a maximum in the limit of an intrinsic barrier region. The potential and charge distribution in the static N-i-N structure, including the effects of the charge distribution at the N-sides, is calculated analytically. For this structure a linear current-voltage relation is derived, and found in agreement with numerical results.
U2 - 10.1016/0038-1101(92)90316-5
DO - 10.1016/0038-1101(92)90316-5
M3 - Article
SN - 0038-1101
VL - 35
SP - 897
EP - 904
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 7
ER -