Crystal phase quantum well emission with digital control

S. Assali, J. Lähnemann, T.T.T. Vu, K.D. Jöns, L. Gagliano, M. A. Verheijen, N. Akopian, E.P.A.M. Bakkers, J.E.M. Haverkort

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

5 Citaties (Scopus)

Uittreksel

One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.

TaalEngels
Pagina's6062-6068
Aantal pagina's7
TijdschriftNano Letters
Volume17
Nummer van het tijdschrift10
DOI's
StatusGepubliceerd - 11 okt 2017

Vingerafdruk

Semiconductor quantum wells
Zinc
wurtzite
zinc
quantum wells
Crystals
crystals
Semiconductor quantum dots
Nanowires
nanowires
quantum dots
Plasma confinement
flat plates
Charge carriers
Band structure
engineers
Heterojunctions
charge carriers
Monolayers
discontinuity

Trefwoorden

    Citeer dit

    Assali, S., Lähnemann, J., Vu, T. T. T., Jöns, K. D., Gagliano, L., Verheijen, M. A., ... Haverkort, J. E. M. (2017). Crystal phase quantum well emission with digital control. Nano Letters, 17(10), 6062-6068. DOI: 10.1021/acs.nanolett.7b02489
    Assali, S. ; Lähnemann, J. ; Vu, T.T.T. ; Jöns, K.D. ; Gagliano, L. ; Verheijen, M. A. ; Akopian, N. ; Bakkers, E.P.A.M. ; Haverkort, J.E.M./ Crystal phase quantum well emission with digital control. In: Nano Letters. 2017 ; Vol. 17, Nr. 10. blz. 6062-6068
    @article{0376331836d740ef822bbda26cf04feb,
    title = "Crystal phase quantum well emission with digital control",
    abstract = "One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.",
    keywords = "crystal phase quantum well, gallium phosphide, photoluminescence, Semiconductor nanowire, spontaneous polarization",
    author = "S. Assali and J. L{\"a}hnemann and T.T.T. Vu and K.D. J{\"o}ns and L. Gagliano and Verheijen, {M. A.} and N. Akopian and E.P.A.M. Bakkers and J.E.M. Haverkort",
    year = "2017",
    month = "10",
    day = "11",
    doi = "10.1021/acs.nanolett.7b02489",
    language = "English",
    volume = "17",
    pages = "6062--6068",
    journal = "Nano Letters",
    issn = "1530-6984",
    publisher = "American Chemical Society",
    number = "10",

    }

    Assali, S, Lähnemann, J, Vu, TTT, Jöns, KD, Gagliano, L, Verheijen, MA, Akopian, N, Bakkers, EPAM & Haverkort, JEM 2017, 'Crystal phase quantum well emission with digital control' Nano Letters, vol. 17, nr. 10, blz. 6062-6068. DOI: 10.1021/acs.nanolett.7b02489

    Crystal phase quantum well emission with digital control. / Assali, S.; Lähnemann, J.; Vu, T.T.T.; Jöns, K.D.; Gagliano, L.; Verheijen, M. A.; Akopian, N.; Bakkers, E.P.A.M.; Haverkort, J.E.M.

    In: Nano Letters, Vol. 17, Nr. 10, 11.10.2017, blz. 6062-6068.

    Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

    TY - JOUR

    T1 - Crystal phase quantum well emission with digital control

    AU - Assali,S.

    AU - Lähnemann,J.

    AU - Vu,T.T.T.

    AU - Jöns,K.D.

    AU - Gagliano,L.

    AU - Verheijen,M. A.

    AU - Akopian,N.

    AU - Bakkers,E.P.A.M.

    AU - Haverkort,J.E.M.

    PY - 2017/10/11

    Y1 - 2017/10/11

    N2 - One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.

    AB - One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.

    KW - crystal phase quantum well

    KW - gallium phosphide

    KW - photoluminescence

    KW - Semiconductor nanowire

    KW - spontaneous polarization

    UR - http://www.scopus.com/inward/record.url?scp=85031098565&partnerID=8YFLogxK

    U2 - 10.1021/acs.nanolett.7b02489

    DO - 10.1021/acs.nanolett.7b02489

    M3 - Article

    VL - 17

    SP - 6062

    EP - 6068

    JO - Nano Letters

    T2 - Nano Letters

    JF - Nano Letters

    SN - 1530-6984

    IS - 10

    ER -

    Assali S, Lähnemann J, Vu TTT, Jöns KD, Gagliano L, Verheijen MA et al. Crystal phase quantum well emission with digital control. Nano Letters. 2017 okt 11;17(10):6062-6068. Beschikbaar vanaf, DOI: 10.1021/acs.nanolett.7b02489