Crossed InSb nanowire junctions for Majorana operations

D. Car, S. Gazibegovic, S.C. Balk, S.C. Boj, E. Fadaly, H. Zhang, R. op het Veld, M.A. Verheijen, L.P. Kouwenhoven, E.P.A.M. Bakkers

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In this work we report on recent advances in the fabrication and characterization of crossed InSb nanowires. The yield of crystalline nanowire crosses has been increased by growing the wires on 111 facets created in 100-oriented InP substrates by wet chemical etching. Ebeam lithography on the tilted facets has been developed to precisely control the position of the catalysts particles, crucial for an optimized crossing process. With transmission electron microscopy we investigate the crystalline quality of the wire-wire interface. Low-temperature transport studies show quantized conductance across the junction indicating the high quality of the merged nanowires.

Originele taal-2Engels
Titel2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
Plaats van productiePiscatway
UitgeverijInstitute of Electrical and Electronics Engineers
Aantal pagina's2
ISBN van elektronische versie978-1-5090-1964-9
DOI's
StatusGepubliceerd - 1 aug 2016
Evenement2016 Compound Semiconductor Week (CSW 2016) - Toyama International Conference Center, Toyama, Japan
Duur: 26 jun 201630 jun 2016

Congres

Congres2016 Compound Semiconductor Week (CSW 2016)
Verkorte titelCSW 2016
LandJapan
StadToyama
Periode26/06/1630/06/16

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Car, D., Gazibegovic, S., Balk, S. C., Boj, S. C., Fadaly, E., Zhang, H., ... Bakkers, E. P. A. M. (2016). Crossed InSb nanowire junctions for Majorana operations. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 [7528546] Piscatway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ICIPRM.2016.7528546