Cross-sectional STM on InGaAs/InAlAs laser structures

P. Offermans, P.M. Koenraad, J.H. Wolter, J.D. Song, J.M. Kim, S.J. Bae, Y.T. Lee, M. Beck, T. Aellen, J. Faist

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

A proper design of the active layers and injector layers is a vital step in producing sophisticated III/V semiconductor laser structures. In order to generate the proper transition energies and probabilities to obtain optimal laset characteristics, one must carefully engineer the laser thicknesses and/or laser compositions. Atomically resolved real-space scanning probetechniques are indispensable tools in optimizing and verifying the growth process. We have studied an InGaAs/InAlAs quantum cascade and a digital alloy quantum well laser stlucture with cross-sectional scanning hmneling microscopy (X-STM), We show the effect of rapid thermal annealing on the digital alloy quantum well structure. In the quantum cascade laser structure digital alloy grading was used to soften the barriers of the active region. We show that due to alloy fluctuations, softening of the barriers occurs even without the digital grading.
Originele taal-2Engels
TitelMicroscopy of Semiconducting Materials 2003
UitgeverijCRC Press
Pagina's653-656
Aantal pagina's4
ISBN van elektronische versie9781351083089
ISBN van geprinte versie0750309792, 9781315895536
DOI's
StatusGepubliceerd - 2003
Evenementconference; Microscopy of Semiconducting Materials Conference, 2003; 2003-03-31; 2003-04-03 -
Duur: 31 mrt 20033 apr 2003

Publicatie series

NaamInstitute of Physics Conference Series
Volume180
ISSN van geprinte versie0951-3248

Congres

Congresconference; Microscopy of Semiconducting Materials Conference, 2003; 2003-03-31; 2003-04-03
Periode31/03/033/04/03
AnderMicroscopy of Semiconducting Materials Conference, 2003

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