A proper design of the active layers and injector layers is a vital step in producing
sophisticated III/V semiconductor laser structures. In order to generate the proper transition
energies and probabilities to obtain optimal laset characteristics, one must carefully engineer the laser thicknesses and/or laser compositions. Atomically resolved real-space scanning probetechniques are indispensable tools in optimizing and verifying the growth process. We have studied an InGaAs/InAlAs quantum cascade and a digital alloy quantum well laser stlucture with cross-sectional scanning hmneling microscopy (X-STM), We show the effect of rapid thermal annealing on the digital alloy quantum well structure. In the quantum cascade laser structure digital alloy grading was used to soften the barriers of the active region. We show that due to alloy fluctuations, softening of the barriers occurs even without the digital grading.
|Naam||Institute of Physics Conference Series|
|ISSN van geprinte versie||0951-3248|
|Congres||conference; Microscopy of Semiconducting Materials Conference, 2003; 2003-03-31; 2003-04-03|
|Periode||31/03/03 → 3/04/03|
|Ander||Microscopy of Semiconducting Materials Conference, 2003|