Coupling of single InGaAs quantum dots to the plasmon resonance of a metal nanocrystal

A.J. Urbanczyk; G.J. Hamhuis; R. Notzel

doi:10.1063/1.3467853

Coupling of single InGaAs quantum dots to the plasmon resonance of a metal nanocrystal

A.J. Urbanczyk, G.J. Hamhuis, R. Notzel

Photonics and Semiconductor Nanophysics

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The authors report the coupling of single InGaAs quantum dots (QDs) to the surface plasmon resonance of a metal nanocrystal. Clear enhancement of the photoluminescence (PL) in the spectral region of the surface plasmon resonance is observed which splits up into distinct emission lines from single QDs in micro-PL. The hybrid metal-semiconductor structure is grown by molecular beam epitaxy on GaAs (100) utilizing the concept of self-organized anisotropic strain engineering for realizing ordered arrays with nanometer-scale precise positioning of the metal nanocrystals with respect to the QDs

Originele taal-2	Engels
Artikelnummer	043105
Pagina's (van-tot)	1-3
Tijdschrift	Applied Physics Letters
Volume	97
Nummer van het tijdschrift	4
DOI's	https://doi.org/10.1063/1.3467853
Status	Gepubliceerd - 2010

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10.1063/1.3467853

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abstract = "The authors report the coupling of single InGaAs quantum dots (QDs) to the surface plasmon resonance of a metal nanocrystal. Clear enhancement of the photoluminescence (PL) in the spectral region of the surface plasmon resonance is observed which splits up into distinct emission lines from single QDs in micro-PL. The hybrid metal-semiconductor structure is grown by molecular beam epitaxy on GaAs (100) utilizing the concept of self-organized anisotropic strain engineering for realizing ordered arrays with nanometer-scale precise positioning of the metal nanocrystals with respect to the QDs",

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AB - The authors report the coupling of single InGaAs quantum dots (QDs) to the surface plasmon resonance of a metal nanocrystal. Clear enhancement of the photoluminescence (PL) in the spectral region of the surface plasmon resonance is observed which splits up into distinct emission lines from single QDs in micro-PL. The hybrid metal-semiconductor structure is grown by molecular beam epitaxy on GaAs (100) utilizing the concept of self-organized anisotropic strain engineering for realizing ordered arrays with nanometer-scale precise positioning of the metal nanocrystals with respect to the QDs

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Coupling of single InGaAs quantum dots to the plasmon resonance of a metal nanocrystal

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