Correlation effects of DX centers on electron mobility in delta doped semiconductors investigated by Monte Carlo simulations

J.M. Shi; G. A. Farias; P. M. Koenraad; A.F.W. van de Stadt; F.M. Peeters; J. H. Wolter; J. T. Devreese

Correlation effects of DX centers on electron mobility in delta doped semiconductors investigated by Monte Carlo simulations

J.M. Shi, G. A. Farias, P. M. Koenraad, A.F.W. van de Stadt, F.M. Peeters, J. H. Wolter, J. T. Devreese

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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We present a theoretical study of correlation effects of DX centers on electron mobility in Si δ-doped GaAs in the presence of an external hydrostatic pressure. A Monte Carlo approach has been developed to simulate these correlations through the charged-impurity distribution within the d⁺/DX⁰ and d⁺/DX^- models. A detailed comparison between experiment and theory shows that theory excluding the correlation effects underestimates the electron mobility systematically, while the d⁺/DX^- model can explain well the experimental data.

Originele taal-2	Engels
Pagina's (van-tot)	327-331
Aantal pagina's	5
Tijdschrift	Brazilian Journal of Physics
Volume	27A
Nummer van het tijdschrift	4
Status	Gepubliceerd - 1 dec. 1997

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title = "Correlation effects of DX centers on electron mobility in delta doped semiconductors investigated by Monte Carlo simulations",

abstract = "We present a theoretical study of correlation effects of DX centers on electron mobility in Si δ-doped GaAs in the presence of an external hydrostatic pressure. A Monte Carlo approach has been developed to simulate these correlations through the charged-impurity distribution within the d+/DX0 and d+/DX- models. A detailed comparison between experiment and theory shows that theory excluding the correlation effects underestimates the electron mobility systematically, while the d+/DX- model can explain well the experimental data.",

author = "J.M. Shi and Farias, {G. A.} and Koenraad, {P. M.} and {van de Stadt}, A.F.W. and F.M. Peeters and Wolter, {J. H.} and Devreese, {J. T.}",

year = "1997",

month = dec,

day = "1",

language = "English",

volume = "27A",

pages = "327--331",

journal = "Brazilian Journal of Physics",

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T1 - Correlation effects of DX centers on electron mobility in delta doped semiconductors investigated by Monte Carlo simulations

AU - Shi, J.M.

AU - Farias, G. A.

AU - Koenraad, P. M.

AU - van de Stadt, A.F.W.

AU - Peeters, F.M.

AU - Wolter, J. H.

AU - Devreese, J. T.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - We present a theoretical study of correlation effects of DX centers on electron mobility in Si δ-doped GaAs in the presence of an external hydrostatic pressure. A Monte Carlo approach has been developed to simulate these correlations through the charged-impurity distribution within the d+/DX0 and d+/DX- models. A detailed comparison between experiment and theory shows that theory excluding the correlation effects underestimates the electron mobility systematically, while the d+/DX- model can explain well the experimental data.

AB - We present a theoretical study of correlation effects of DX centers on electron mobility in Si δ-doped GaAs in the presence of an external hydrostatic pressure. A Monte Carlo approach has been developed to simulate these correlations through the charged-impurity distribution within the d+/DX0 and d+/DX- models. A detailed comparison between experiment and theory shows that theory excluding the correlation effects underestimates the electron mobility systematically, while the d+/DX- model can explain well the experimental data.

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M3 - Article

AN - SCOPUS:0031314327

SN - 0103-9733

VL - 27A

SP - 327

EP - 331

JO - Brazilian Journal of Physics

JF - Brazilian Journal of Physics

IS - 4

ER -

Correlation effects of DX centers on electron mobility in delta doped semiconductors investigated by Monte Carlo simulations

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