Core-state manipulation of single Fe impurities in GaAs with a scanning tunneling microscope

J. Bocquel, V.R. Kortan, C. Sahin, R.P. Campion, B.L. Gallagher, M.E. Flatte, P.M. Koenraad

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

12 Citaten (Scopus)
127 Downloads (Pure)

Samenvatting

We demonstrate that a scanning tunneling microscope tip can be used to manipulate the tightly bound core (d-electron) state of single Fe ions embedded in GaAs. Increasing tip-sample voltage removes one d electron from the core of a single Fe, changing the dopant from the (Fe2+)(-) ionized acceptor state to the (Fe3+)(0) isoelectronic state, which alters the spin moment and dramatically modifies the measured local electronic contrast in topographic maps of the surface. Evidence of internal transitions among the d states of the Fe core is also seen in topographic maps where dark anisotropic features emerge from the interference between two paths: the direct tip-sample tunneling and tunneling which excites a d-state core exciton of the Fe dopant.
Originele taal-2Engels
Artikelnummer075421
Pagina's (van-tot)075421-1/6
Aantal pagina's6
TijdschriftPhysical Review B
Volume87
Nummer van het tijdschrift7
DOI's
StatusGepubliceerd - 2013

Vingerafdruk Duik in de onderzoeksthema's van 'Core-state manipulation of single Fe impurities in GaAs with a scanning tunneling microscope'. Samen vormen ze een unieke vingerafdruk.

Citeer dit