Controlling polarization anisotropy of site-controlled InAs/InP (100) quantum dots

J. Yuan, H. Wang, P.J. Veldhoven, van, J. Wang, T. Vries, de, E. Smalbrugge, C. Jin, P.A.M. Nouwens, E.J. Geluk, A.Yu. Silov, R. Nötzel

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Samenvatting

We report on the shape and polarization control of site-controlled multiple and single InAs quantum dots (QDs) on InP pyramids grown by selective-area metal-organic vapor phase epitaxy. With increasing growth temperature the QDs elongate causing strong linear polarization of the photoluminescence. With reduced pyramid base/pyramid top area/QD number, the degree of polarization decreases, attributed to the symmetric pyramid top, reaching zero for single QDs grown at lower temperature. This control of linear polarization is important for entangled photon sources operating in the 1.55 µm wavelength region.
Originele taal-2Engels
Artikelnummer201904
Pagina's (van-tot)1-3
Aantal pagina's3
TijdschriftApplied Physics Letters
Volume98
Nummer van het tijdschrift20
DOI's
StatusGepubliceerd - 2011

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    Yuan, J., Wang, H., Veldhoven, van, P. J., Wang, J., Vries, de, T., Smalbrugge, E., Jin, C., Nouwens, P. A. M., Geluk, E. J., Silov, A. Y., & Nötzel, R. (2011). Controlling polarization anisotropy of site-controlled InAs/InP (100) quantum dots. Applied Physics Letters, 98(20), 1-3. [201904]. https://doi.org/10.1063/1.3591155