Control of strain in GaSbAs/InAs/GaAs quantum dots

V. Haxha, I. Drouzas, J.M. Ulloa, M. Bozkurt, P.M. Koenraad, D.J. Mowbray, H.Y. Liu, M.J. Steer, M. Hopkinson, M.A. Migliorato

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

2 Citaten (Scopus)
84 Downloads (Pure)

Samenvatting

We discuss strain simulations of quantum dot structures covered with a GaSbAs strain reducing capping layer in the presence of Sb segregation. Cross Sectional Scanning Tunneling Microscopy shows strong Sb and In segregation in the material surrounding the quantum dot. Using the three layer model originally proposed for the SiGe system by D. J. Godbey, M. G. Ancona, J. Vac. Sci. Technol. A 15, 976 (1997) we accurately calculate the segregation profile and include a non uniform composition to our models. Using atomistic modeling, we present strain maps of the quantum dot structures that show the propagation of the strain into the GaAs region is strongly affected by the shape and composition of the strain reduction layer.
Originele taal-2Engels
Pagina's (van-tot)012065-1/4
Aantal pagina's4
TijdschriftJournal of Physics: Conference Series
Volume245
Nummer van het tijdschrift1
DOI's
StatusGepubliceerd - 2010

Vingerafdruk Duik in de onderzoeksthema's van 'Control of strain in GaSbAs/InAs/GaAs quantum dots'. Samen vormen ze een unieke vingerafdruk.

Citeer dit