Samenvatting
To further increase the conversion efficiency of crystalline silicon solar cells it is vital to reduce the recombination losses between the photoactive part of the solar cell and the metal contacts. This is ideally achieved by fabricating contacts which passivate defects at the silicon surface while being simultaneously selective for only a single type of charge carrier, i.e. either electrons or holes. Despite the extensive research effort aimed at realizing such contacts, no clear overview of the fundamental physics of passivating contacts has appeared yet. Therefore, we present such an overview, introduce a clear classification of passivating contacts, and discuss their design guidelines and future prospects
Originele taal-2 | Engels |
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Titel | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, 14-19 June 2015, New Orleans, Louisiana |
Plaats van productie | Piscataway |
Uitgeverij | Institute of Electrical and Electronics Engineers |
ISBN van geprinte versie | 9781479979448 |
DOI's | |
Status | Gepubliceerd - 14 dec. 2015 |
Evenement | 42nd IEEE Photovoltaic Specialist Conference (PVSC 2015) - Hyatt Regency New Orleans , New Orleans, Verenigde Staten van Amerika Duur: 14 jun. 2015 → 19 jun. 2015 Congresnummer: 42 https://www.ieee-pvsc.org/PVSC42/ |
Congres
Congres | 42nd IEEE Photovoltaic Specialist Conference (PVSC 2015) |
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Verkorte titel | PVSC 2015 |
Land/Regio | Verenigde Staten van Amerika |
Stad | New Orleans |
Periode | 14/06/15 → 19/06/15 |
Ander | 42nd Photovoltaic Specialists Conference |
Internet adres |