Samenvatting
Three-dimensional stacking technology promises to solve the interconnect bottleneck problem by using Through-Silicon-Vias (TSVs) to vertically connect circuit layers. However, manufacturing steps may lead to partly broken or incompletely filled TSVs that may degrade the performance and reduce the useful lifetime of a 3D IC. Due to combinations of physical factors such as switching activity, supply noise and crosstalk, path delays can experience speed-up or slow-down that could let the effect of resistive open TSV go undetected by conventional test methods. In this work, we present a metric based on probabilistic analysis to detect delay defects induced by resistive opens that occur on signal line TSVs. Our experimental result will show the accuracy of the proposed metric.
| Originele taal-2 | Engels |
|---|---|
| Titel | 2013 18th IEEE European Test Symposium (ETS) |
| Uitgeverij | Institute of Electrical and Electronics Engineers |
| Aantal pagina's | 6 |
| ISBN van elektronische versie | 978-1-4673-6377-8 |
| ISBN van geprinte versie | 978-1-4673-6376-1 |
| DOI's | |
| Status | Gepubliceerd - 29 jul. 2013 |
| Extern gepubliceerd | Ja |
| Evenement | 18th IEEE European Test Symposium (ETS 2013) - Avignon, Frankrijk Duur: 27 mei 2013 → 30 mei 2013 |
Congres
| Congres | 18th IEEE European Test Symposium (ETS 2013) |
|---|---|
| Land/Regio | Frankrijk |
| Stad | Avignon |
| Periode | 27/05/13 → 30/05/13 |
Vingerafdruk
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