Composition profiling of GaAs/AIGaAs quantum dots grown by droplet epitaxy

J. Bocquel, A.D. Giddings, T. Mano, T.J. Prosa, D.J. Larson, P.M. Koenraad

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

11 Citaten (Scopus)
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Samenvatting

Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of crosssectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.
Originele taal-2Engels
Artikelnummer153102
Pagina's (van-tot)153102-1/4
Aantal pagina's4
TijdschriftApplied Physics Letters
Volume105
DOI's
StatusGepubliceerd - 2014

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