Composition dependent nature of the fundamental optical transition in (In, Ga)As/GaP quantum dots

C. Robert; C. Cornet; T. Nguyen Thanh; M.O. Nestoklon; K. Pereira Da Silva; M.I. Alonso; A.R. Goñi; S. Tricot; P. Turban; M. Perrin; H. Folliot; T. Rohel; L. Pedesseau; J.M. Jancu; J. Even; S. Mauger; P.M. Koenraad; A. Balocchi; P. Barate; X. Marie; N. Bertru; A. Le Corre; O. Durand

doi:10.1109/ICIPRM.2014.6880555

Composition dependent nature of the fundamental optical transition in (In, Ga)As/GaP quantum dots

C. Robert, C. Cornet, T. Nguyen Thanh, M.O. Nestoklon, K. Pereira Da Silva, M.I. Alonso, A.R. Goñi, S. Tricot, P. Turban, M. Perrin, H. Folliot, T. Rohel, L. Pedesseau, J.M. Jancu, J. Even, S. Mauger, P.M. Koenraad, A. Balocchi, P. Barate, X. MarieN. Bertru, A. Le Corre, O. Durand

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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The nature of the ground optical transition in (In, Ga)As/GaP quantum dots is thoroughly investigated through k·p calculations and a supercell tight-binding simulation. Quantum dot morphology is deduced from scanning-tunneling-microscopy images. The strain field has a strong influence on the conduction band states. Indeed, for a pure GaAs QD, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a tensile strain region, having mainly Xz character. Time resolved and hydrostatic pressure photoluminescence experiments strongly support the theoretical conclusions. Promising results from the literature on (In, Ga)As/GaP quantum dot will be reviewed.

Originele taal-2	Engels
Titel	26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
Uitgeverij	Institute of Electrical and Electronics Engineers
Aantal pagina's	2
ISBN van geprinte versie	9781479957293
DOI's	https://doi.org/10.1109/ICIPRM.2014.6880555
Status	Gepubliceerd - 2014
Evenement	26th International Conference on Indium Phosphide and Related Materials (IPRM 2014) - Montpellier, Frankrijk Duur: 11 mei 2014 → 15 mei 2014 Congresnummer: 26

Congres

Congres	26th International Conference on Indium Phosphide and Related Materials (IPRM 2014)
Verkorte titel	IPRM 2014
Land/Regio	Frankrijk
Stad	Montpellier
Periode	11/05/14 → 15/05/14
Ander	26th International Conference on Indium Phosphide and Related Materials

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Robert, C., Cornet, C., Thanh, T. N., Nestoklon, M. O., Pereira Da Silva, K., Alonso, M. I., Goñi, A. R., Tricot, S., Turban, P., Perrin, M., Folliot, H., Rohel, T., Pedesseau, L., Jancu, J. M., Even, J., Mauger, S., Koenraad, P. M., Balocchi, A., Barate, P., ... Durand, O. (2014). Composition dependent nature of the fundamental optical transition in (In, Ga)As/GaP quantum dots. In 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014 Artikel 6880555 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ICIPRM.2014.6880555

@inproceedings{6134bc5265cd4a8e8f768e2d4d7ca99b,

title = "Composition dependent nature of the fundamental optical transition in (In, Ga)As/GaP quantum dots",

abstract = "The nature of the ground optical transition in (In, Ga)As/GaP quantum dots is thoroughly investigated through k·p calculations and a supercell tight-binding simulation. Quantum dot morphology is deduced from scanning-tunneling-microscopy images. The strain field has a strong influence on the conduction band states. Indeed, for a pure GaAs QD, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a tensile strain region, having mainly Xz character. Time resolved and hydrostatic pressure photoluminescence experiments strongly support the theoretical conclusions. Promising results from the literature on (In, Ga)As/GaP quantum dot will be reviewed.",

author = "C. Robert and C. Cornet and Thanh, {T. Nguyen} and M.O. Nestoklon and {Pereira Da Silva}, K. and M.I. Alonso and A.R. Go{\~n}i and S. Tricot and P. Turban and M. Perrin and H. Folliot and T. Rohel and L. Pedesseau and J.M. Jancu and J. Even and S. Mauger and P.M. Koenraad and A. Balocchi and P. Barate and X. Marie and N. Bertru and {Le Corre}, A. and O. Durand",

year = "2014",

doi = "10.1109/ICIPRM.2014.6880555",

language = "English",

isbn = "9781479957293",

booktitle = "26th International Conference on Indium Phosphide and Related Materials, IPRM 2014",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), IPRM 2014 ; Conference date: 11-05-2014 Through 15-05-2014",

}

Robert, C, Cornet, C, Thanh, TN, Nestoklon, MO, Pereira Da Silva, K, Alonso, MI, Goñi, AR, Tricot, S, Turban, P, Perrin, M, Folliot, H, Rohel, T, Pedesseau, L, Jancu, JM, Even, J, Mauger, S, Koenraad, PM, Balocchi, A, Barate, P, Marie, X, Bertru, N, Le Corre, A & Durand, O 2014, Composition dependent nature of the fundamental optical transition in (In, Ga)As/GaP quantum dots. in 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014., 6880555, Institute of Electrical and Electronics Engineers, 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), Montpellier, Frankrijk, 11/05/14. https://doi.org/10.1109/ICIPRM.2014.6880555

Composition dependent nature of the fundamental optical transition in (In, Ga)As/GaP quantum dots. / Robert, C.; Cornet, C.; Thanh, T. Nguyen et al.
26th International Conference on Indium Phosphide and Related Materials, IPRM 2014. Institute of Electrical and Electronics Engineers, 2014. 6880555.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Composition dependent nature of the fundamental optical transition in (In, Ga)As/GaP quantum dots

AU - Robert, C.

AU - Cornet, C.

AU - Thanh, T. Nguyen

AU - Nestoklon, M.O.

AU - Pereira Da Silva, K.

AU - Alonso, M.I.

AU - Goñi, A.R.

AU - Tricot, S.

AU - Turban, P.

AU - Perrin, M.

AU - Folliot, H.

AU - Rohel, T.

AU - Pedesseau, L.

AU - Jancu, J.M.

AU - Even, J.

AU - Mauger, S.

AU - Koenraad, P.M.

AU - Balocchi, A.

AU - Barate, P.

AU - Marie, X.

AU - Bertru, N.

AU - Le Corre, A.

AU - Durand, O.

N1 - Conference code: 26

PY - 2014

Y1 - 2014

N2 - The nature of the ground optical transition in (In, Ga)As/GaP quantum dots is thoroughly investigated through k·p calculations and a supercell tight-binding simulation. Quantum dot morphology is deduced from scanning-tunneling-microscopy images. The strain field has a strong influence on the conduction band states. Indeed, for a pure GaAs QD, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a tensile strain region, having mainly Xz character. Time resolved and hydrostatic pressure photoluminescence experiments strongly support the theoretical conclusions. Promising results from the literature on (In, Ga)As/GaP quantum dot will be reviewed.

AB - The nature of the ground optical transition in (In, Ga)As/GaP quantum dots is thoroughly investigated through k·p calculations and a supercell tight-binding simulation. Quantum dot morphology is deduced from scanning-tunneling-microscopy images. The strain field has a strong influence on the conduction band states. Indeed, for a pure GaAs QD, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a tensile strain region, having mainly Xz character. Time resolved and hydrostatic pressure photoluminescence experiments strongly support the theoretical conclusions. Promising results from the literature on (In, Ga)As/GaP quantum dot will be reviewed.

UR - http://www.scopus.com/inward/record.url?scp=84906751684&partnerID=8YFLogxK

U2 - 10.1109/ICIPRM.2014.6880555

DO - 10.1109/ICIPRM.2014.6880555

M3 - Conference contribution

AN - SCOPUS:84906751684

SN - 9781479957293

BT - 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014

PB - Institute of Electrical and Electronics Engineers

T2 - 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014)

Y2 - 11 May 2014 through 15 May 2014

ER -

Composition dependent nature of the fundamental optical transition in (In, Ga)As/GaP quantum dots

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