Composition dependent nature of the fundamental optical transition in (In, Ga)As/GaP quantum dots

C. Robert, C. Cornet, T. Nguyen Thanh, M.O. Nestoklon, K. Pereira Da Silva, M.I. Alonso, A.R. Goñi, S. Tricot, P. Turban, M. Perrin, H. Folliot, T. Rohel, L. Pedesseau, J.M. Jancu, J. Even, S. Mauger, P.M. Koenraad, A. Balocchi, P. Barate, X. MarieN. Bertru, A. Le Corre, O. Durand

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

The nature of the ground optical transition in (In, Ga)As/GaP quantum dots is thoroughly investigated through k·p calculations and a supercell tight-binding simulation. Quantum dot morphology is deduced from scanning-tunneling-microscopy images. The strain field has a strong influence on the conduction band states. Indeed, for a pure GaAs QD, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a tensile strain region, having mainly Xz character. Time resolved and hydrostatic pressure photoluminescence experiments strongly support the theoretical conclusions. Promising results from the literature on (In, Ga)As/GaP quantum dot will be reviewed.

Originele taal-2Engels
Titel26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
UitgeverijInstitute of Electrical and Electronics Engineers
Aantal pagina's2
ISBN van geprinte versie9781479957293
DOI's
StatusGepubliceerd - 2014
Evenement26th International Conference on Indium Phosphide and Related Materials (IPRM 2014) - Montpellier, Frankrijk
Duur: 11 mei 201415 mei 2014
Congresnummer: 26

Congres

Congres26th International Conference on Indium Phosphide and Related Materials (IPRM 2014)
Verkorte titelIPRM 2014
LandFrankrijk
StadMontpellier
Periode11/05/1415/05/14
Ander26th International Conference on Indium Phosphide and Related Materials

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