Composite quantum wells on InP for blue stark shift

A.Y. Silov, B.N. Aneeshkumar, M.R. Leijs, H. Vonk, J.H. Wolter

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

Structures with real space separate confinement of electrons and holes can cause both blue- and redshifting of the absorption edge. Such a separate confinemnt can be achieved in a composite well structure, with materials with reverse band offset ratio with respect to the barrier. We made use of InAsyP1-y and GaxIn1-xAs squantum wells surrounded by InP barriers. Both wells are about 4 nm thick and are separated by 1 nm InP. The structures were grown by Chemical Beam Epitaxy in a p-i-n structure. It was found that an electric field of about 30kV/cm produces a blue shift of 25 meV.
Originele taal-2Engels
TitelProceedings of the 5th annual symposium of the IEEE/LEOS Benelux Chapter : October 30, 2000, Delft , the Netherlands
RedacteurenX.J.M. Leijtens, J.H. Besten, den
Plaats van productieDelft
UitgeverijDelft University of Technology
Pagina's167-170
ISBN van geprinte versie90-9014260-6
StatusGepubliceerd - 2000
Evenement5th Annual Symposium of the IEEE/LEOS Benelux Chapter - Delft, Nederland
Duur: 30 okt 200030 okt 2000

Congres

Congres5th Annual Symposium of the IEEE/LEOS Benelux Chapter
LandNederland
StadDelft
Periode30/10/0030/10/00

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  • Citeer dit

    Silov, A. Y., Aneeshkumar, B. N., Leijs, M. R., Vonk, H., & Wolter, J. H. (2000). Composite quantum wells on InP for blue stark shift. In X. J. M. Leijtens, & J. H. Besten, den (editors), Proceedings of the 5th annual symposium of the IEEE/LEOS Benelux Chapter : October 30, 2000, Delft , the Netherlands (blz. 167-170). Delft University of Technology.