Components for AlGaN/GaN Power Amplifiers

B. Jacobs; P. Wingelaar; M.C.J.C.M. Krämer; S. Falcone; F. Karouta; A.P. Hek, de; E. Suijker; R. Dijk, van

Components for AlGaN/GaN Power Amplifiers

B. Jacobs
, P. Wingelaar
, M.C.J.C.M. Krämer
, S. Falcone
, F. Karouta
, A.P. Hek, de
, E. Suijker
, R. Dijk, van

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

Samenvatting

Ohmic contacts and Schottky contacts were made on an undoped AlGaN/GaN FET structure. Despite the high Al content (33%), we were still able to obtain a contact resistance of 0.3 Wmm. Pulsed measurements showed the large effect of self-heating even for circular contacts with a radius of 50 mm. The behavior of the Ni/Au Schottky contacts is according to the charge control model; the reverse current and capacitance scale linearly with the area of the diode. Tests with polygon type diodes showed no dependence of the reverse current on the number of polygon corners. The reverse current decreased when the devices were aged at 400 0C for 30 hrs. Coplanar Waveguide discontinuities were realized on AlN substrates. A scalable lumped element model was derived from measurements for T-junctions, transmission lines, bends and crosses. Differences between the model and the measurements can probably be attributed to the determination of the line capacitance needed to de-embed the probe pads.

Originele taal-2	Engels
Titel	Wide-bandgap electronics (MRS Spring Meeting 2001) April 16 - 20, 2001, San Francisco, California, USA
Plaats van productie	Warrendale
Uitgeverij	Materials Research Society
Pagina's	E10.4-
ISBN van geprinte versie	1-558-99616-8
Status	Gepubliceerd - 2001
Evenement	2001MRS Spring Meeting & Exhibit - San Francisco, Verenigde Staten van Amerika Duur: 16 apr. 2001 → 20 apr. 2001 https://www.mrs.org/spring2001

Publicatie series

Naam	Materials Research Society Symposium Proceedings
Volume	680
ISSN van geprinte versie	0272-9172

Congres

Congres	2001MRS Spring Meeting & Exhibit
Land/Regio	Verenigde Staten van Amerika
Stad	San Francisco
Periode	16/04/01 → 20/04/01
Ander	MRS (Materials Research Society) spring meeting ; 2001 (San Francisco, Calif.) : 2001.04.16-20
Internet adres	https://www.mrs.org/spring2001

Citeer dit

Jacobs, B., Wingelaar, P., Krämer, M. C. J. C. M., Falcone, S., Karouta, F., Hek, de, A. P., Suijker, E., & Dijk, van, R. (2001). Components for AlGaN/GaN Power Amplifiers. In Wide-bandgap electronics (MRS Spring Meeting 2001) April 16 - 20, 2001, San Francisco, California, USA (blz. E10.4-). (Materials Research Society Symposium Proceedings; Vol. 680). Materials Research Society.

@inproceedings{5c9a2a574bd64c6ba8fb3ea1db8c5596,

title = "Components for AlGaN/GaN Power Amplifiers",

abstract = "Ohmic contacts and Schottky contacts were made on an undoped AlGaN/GaN FET structure. Despite the high Al content (33\%), we were still able to obtain a contact resistance of 0.3 Wmm. Pulsed measurements showed the large effect of self-heating even for circular contacts with a radius of 50 mm. The behavior of the Ni/Au Schottky contacts is according to the charge control model; the reverse current and capacitance scale linearly with the area of the diode. Tests with polygon type diodes showed no dependence of the reverse current on the number of polygon corners. The reverse current decreased when the devices were aged at 400 0C for 30 hrs. Coplanar Waveguide discontinuities were realized on AlN substrates. A scalable lumped element model was derived from measurements for T-junctions, transmission lines, bends and crosses. Differences between the model and the measurements can probably be attributed to the determination of the line capacitance needed to de-embed the probe pads.",

author = "B. Jacobs and P. Wingelaar and M.C.J.C.M. Kr{\"a}mer and S. Falcone and F. Karouta and \{Hek, de\}, A.P. and E. Suijker and \{Dijk, van\}, R.",

year = "2001",

language = "English",

isbn = "1-558-99616-8",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "E10.4--",

booktitle = "Wide-bandgap electronics (MRS Spring Meeting 2001) April 16 - 20, 2001, San Francisco, California, USA",

address = "United States",

note = "2001MRS Spring Meeting \& Exhibit ; Conference date: 16-04-2001 Through 20-04-2001",

url = "https://www.mrs.org/spring2001",

}

Jacobs, B, Wingelaar, P, Krämer, MCJCM, Falcone, S, Karouta, F, Hek, de, AP, Suijker, E & Dijk, van, R 2001, Components for AlGaN/GaN Power Amplifiers. in Wide-bandgap electronics (MRS Spring Meeting 2001) April 16 - 20, 2001, San Francisco, California, USA. Materials Research Society Symposium Proceedings, vol. 680, Materials Research Society, Warrendale, blz. E10.4-, 2001MRS Spring Meeting & Exhibit, San Francisco, California, Verenigde Staten van Amerika, 16/04/01.

Components for AlGaN/GaN Power Amplifiers. / Jacobs, B.; Wingelaar, P.; Krämer, M.C.J.C.M. et al.
Wide-bandgap electronics (MRS Spring Meeting 2001) April 16 - 20, 2001, San Francisco, California, USA. Warrendale: Materials Research Society, 2001. blz. E10.4- (Materials Research Society Symposium Proceedings; Vol. 680).

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Components for AlGaN/GaN Power Amplifiers

AU - Jacobs, B.

AU - Wingelaar, P.

AU - Krämer, M.C.J.C.M.

AU - Falcone, S.

AU - Karouta, F.

AU - Hek, de, A.P.

AU - Suijker, E.

AU - Dijk, van, R.

PY - 2001

Y1 - 2001

N2 - Ohmic contacts and Schottky contacts were made on an undoped AlGaN/GaN FET structure. Despite the high Al content (33%), we were still able to obtain a contact resistance of 0.3 Wmm. Pulsed measurements showed the large effect of self-heating even for circular contacts with a radius of 50 mm. The behavior of the Ni/Au Schottky contacts is according to the charge control model; the reverse current and capacitance scale linearly with the area of the diode. Tests with polygon type diodes showed no dependence of the reverse current on the number of polygon corners. The reverse current decreased when the devices were aged at 400 0C for 30 hrs. Coplanar Waveguide discontinuities were realized on AlN substrates. A scalable lumped element model was derived from measurements for T-junctions, transmission lines, bends and crosses. Differences between the model and the measurements can probably be attributed to the determination of the line capacitance needed to de-embed the probe pads.

AB - Ohmic contacts and Schottky contacts were made on an undoped AlGaN/GaN FET structure. Despite the high Al content (33%), we were still able to obtain a contact resistance of 0.3 Wmm. Pulsed measurements showed the large effect of self-heating even for circular contacts with a radius of 50 mm. The behavior of the Ni/Au Schottky contacts is according to the charge control model; the reverse current and capacitance scale linearly with the area of the diode. Tests with polygon type diodes showed no dependence of the reverse current on the number of polygon corners. The reverse current decreased when the devices were aged at 400 0C for 30 hrs. Coplanar Waveguide discontinuities were realized on AlN substrates. A scalable lumped element model was derived from measurements for T-junctions, transmission lines, bends and crosses. Differences between the model and the measurements can probably be attributed to the determination of the line capacitance needed to de-embed the probe pads.

M3 - Conference contribution

SN - 1-558-99616-8

T3 - Materials Research Society Symposium Proceedings

SP - E10.4-

BT - Wide-bandgap electronics (MRS Spring Meeting 2001) April 16 - 20, 2001, San Francisco, California, USA

PB - Materials Research Society

CY - Warrendale

T2 - 2001MRS Spring Meeting & Exhibit

Y2 - 16 April 2001 through 20 April 2001

ER -

Components for AlGaN/GaN Power Amplifiers

Samenvatting

Publicatie series

Congres

Vingerafdruk

Citeer dit