A Comparison of Tunnel Diode and Schottky Diode in Rectifier at 2.4 GHz for Low Input Power Region

Veselin Manev; Huib Visser; Peter Baltus; Hao Gao

doi:10.1109/WPTC45513.2019.9055615

A Comparison of Tunnel Diode and Schottky Diode in Rectifier at 2.4 GHz for Low Input Power Region

Veselin Manev, Huib Visser, Peter Baltus, Hao Gao

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

6 Citaten (Scopus)

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This paper presents a comparison of tunnel diode to Schottky diode in rectifier at 2.4 GHz under -10dBm input power region. The tunnel diode based rectifier has an advantage of quantum tunneling effect. Therefore it can achieve higher rectification efficiencies. In this work, GI401A tunnel diode and HSMS-285B Schottky diode are used. The input power range of measurements are from -10dBm to - 40dBm. In the same topology, same material, and the same input power situation, the tunnel diode based rectifier achieves 12.6% efficiency, while the Schottky diode based rectifier achieves 6.53% efficiency.

Originele taal-2	Engels
Titel	2019 IEEE MTT-S International Wireless Symposium, IWS 2019
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	274-277
Aantal pagina's	4
ISBN van elektronische versie	9781728107059
DOI's	https://doi.org/10.1109/WPTC45513.2019.9055615
Status	Gepubliceerd - jun. 2019
Evenement	2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Guangzhou, China Duur: 19 mei 2019 → 22 mei 2019 https://10times.com/ieee-iws

Congres

Congres	2019 IEEE MTT-S International Wireless Symposium, IWS 2019
Verkorte titel	IEEE IWS 2019
Land/Regio	China
Stad	Guangzhou
Periode	19/05/19 → 22/05/19
Internet adres	https://10times.com/ieee-iws

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@inproceedings{b996d72d45f64849b4275037359b599c,

title = "A Comparison of Tunnel Diode and Schottky Diode in Rectifier at 2.4 GHz for Low Input Power Region",

abstract = "This paper presents a comparison of tunnel diode to Schottky diode in rectifier at 2.4 GHz under -10dBm input power region. The tunnel diode based rectifier has an advantage of quantum tunneling effect. Therefore it can achieve higher rectification efficiencies. In this work, GI401A tunnel diode and HSMS-285B Schottky diode are used. The input power range of measurements are from -10dBm to - 40dBm. In the same topology, same material, and the same input power situation, the tunnel diode based rectifier achieves 12.6% efficiency, while the Schottky diode based rectifier achieves 6.53% efficiency.",

author = "Veselin Manev and Huib Visser and Peter Baltus and Hao Gao",

year = "2019",

month = jun,

doi = "10.1109/WPTC45513.2019.9055615",

language = "English",

pages = "274--277",

booktitle = "2019 IEEE MTT-S International Wireless Symposium, IWS 2019",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2019 IEEE MTT-S International Wireless Symposium, IWS 2019, IEEE IWS 2019 ; Conference date: 19-05-2019 Through 22-05-2019",

url = "https://10times.com/ieee-iws",

}

Manev, V, Visser, H , Baltus, P & Gao, H 2019, A Comparison of Tunnel Diode and Schottky Diode in Rectifier at 2.4 GHz for Low Input Power Region. in 2019 IEEE MTT-S International Wireless Symposium, IWS 2019., 9055615, Institute of Electrical and Electronics Engineers, blz. 274-277, 2019 IEEE MTT-S International Wireless Symposium, IWS 2019, Guangzhou, China, 19/05/19. https://doi.org/10.1109/WPTC45513.2019.9055615

A Comparison of Tunnel Diode and Schottky Diode in Rectifier at 2.4 GHz for Low Input Power Region. / Manev, Veselin; Visser, Huib ; Baltus, Peter et al.
2019 IEEE MTT-S International Wireless Symposium, IWS 2019. Institute of Electrical and Electronics Engineers, 2019. blz. 274-277 9055615.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - A Comparison of Tunnel Diode and Schottky Diode in Rectifier at 2.4 GHz for Low Input Power Region

AU - Manev, Veselin

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AU - Baltus, Peter

AU - Gao, Hao

PY - 2019/6

Y1 - 2019/6

N2 - This paper presents a comparison of tunnel diode to Schottky diode in rectifier at 2.4 GHz under -10dBm input power region. The tunnel diode based rectifier has an advantage of quantum tunneling effect. Therefore it can achieve higher rectification efficiencies. In this work, GI401A tunnel diode and HSMS-285B Schottky diode are used. The input power range of measurements are from -10dBm to - 40dBm. In the same topology, same material, and the same input power situation, the tunnel diode based rectifier achieves 12.6% efficiency, while the Schottky diode based rectifier achieves 6.53% efficiency.

AB - This paper presents a comparison of tunnel diode to Schottky diode in rectifier at 2.4 GHz under -10dBm input power region. The tunnel diode based rectifier has an advantage of quantum tunneling effect. Therefore it can achieve higher rectification efficiencies. In this work, GI401A tunnel diode and HSMS-285B Schottky diode are used. The input power range of measurements are from -10dBm to - 40dBm. In the same topology, same material, and the same input power situation, the tunnel diode based rectifier achieves 12.6% efficiency, while the Schottky diode based rectifier achieves 6.53% efficiency.

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BT - 2019 IEEE MTT-S International Wireless Symposium, IWS 2019

PB - Institute of Electrical and Electronics Engineers

T2 - 2019 IEEE MTT-S International Wireless Symposium, IWS 2019

Y2 - 19 May 2019 through 22 May 2019

ER -

A Comparison of Tunnel Diode and Schottky Diode in Rectifier at 2.4 GHz for Low Input Power Region

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