Comparative study of ALD SiO2 thin films for optical applications

Kristin Pfeiffer, Svetlana Shestaeva, Astrid Bingel, Peter Munzert, Lilit Ghazaryan, C.A.A. van Helvoirt, W.M.M. Kessels, Umut T. Sanli, Corinne Grevent, G. Schütz, M. Putkonen, Iain Buchanan, Lars Jensen, Detlev Ristau, Andreas Tünnermann, Adriana Szeghalmi

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

23 Citaties (Scopus)
1485 Downloads (Pure)

Uittreksel

We have investigated the suitability of atomic layer deposition (ALD) for SiO2 optical coatings and applied it to broadband antireflective multilayers in combination with HfO2 as the high refractive index material. SiO2 thin films were successfully grown using tris[dimethylamino]silane (3DMAS), bis[diethylamino]silane (BDEAS) with plasma activated oxygen as precursors, and the AP-LTO330 precursor with ozone, respectively. The amorphous SiO2 films show very low optical losses within a spectral range of 200 nm to 1100 nm. Laser calorimetric measurements show absorption losses of 300 nm thick SiO2 films of about 1.5 parts per million at a wavelength of 1064 nm. The films are optically homogeneous and possess a good scalability of film thickness. The film surface porosity - which correlates to a shift in the transmittance spectra under vacuum and air conditions - has been suppressed by optimized plasma parameters or Al2O3 sealing layers.
Originele taal-2Engels
Pagina's (van-tot)660-670
TijdschriftOptical Materials Express
Volume6
Nummer van het tijdschrift2
DOI's
StatusGepubliceerd - 1 feb 2016

Citeer dit

Pfeiffer, K., Shestaeva, S., Bingel, A., Munzert, P., Ghazaryan, L., van Helvoirt, C. A. A., ... Szeghalmi, A. (2016). Comparative study of ALD SiO2 thin films for optical applications. Optical Materials Express, 6(2), 660-670. https://doi.org/10.1364/OME.6.000660
Pfeiffer, Kristin ; Shestaeva, Svetlana ; Bingel, Astrid ; Munzert, Peter ; Ghazaryan, Lilit ; van Helvoirt, C.A.A. ; Kessels, W.M.M. ; Sanli, Umut T. ; Grevent, Corinne ; Schütz, G. ; Putkonen, M. ; Buchanan, Iain ; Jensen, Lars ; Ristau, Detlev ; Tünnermann, Andreas ; Szeghalmi, Adriana. / Comparative study of ALD SiO2 thin films for optical applications. In: Optical Materials Express. 2016 ; Vol. 6, Nr. 2. blz. 660-670.
@article{00555fc6dc9644a9becca532db184631,
title = "Comparative study of ALD SiO2 thin films for optical applications",
abstract = "We have investigated the suitability of atomic layer deposition (ALD) for SiO2 optical coatings and applied it to broadband antireflective multilayers in combination with HfO2 as the high refractive index material. SiO2 thin films were successfully grown using tris[dimethylamino]silane (3DMAS), bis[diethylamino]silane (BDEAS) with plasma activated oxygen as precursors, and the AP-LTO330 precursor with ozone, respectively. The amorphous SiO2 films show very low optical losses within a spectral range of 200 nm to 1100 nm. Laser calorimetric measurements show absorption losses of 300 nm thick SiO2 films of about 1.5 parts per million at a wavelength of 1064 nm. The films are optically homogeneous and possess a good scalability of film thickness. The film surface porosity - which correlates to a shift in the transmittance spectra under vacuum and air conditions - has been suppressed by optimized plasma parameters or Al2O3 sealing layers.",
author = "Kristin Pfeiffer and Svetlana Shestaeva and Astrid Bingel and Peter Munzert and Lilit Ghazaryan and {van Helvoirt}, C.A.A. and W.M.M. Kessels and Sanli, {Umut T.} and Corinne Grevent and G. Sch{\"u}tz and M. Putkonen and Iain Buchanan and Lars Jensen and Detlev Ristau and Andreas T{\"u}nnermann and Adriana Szeghalmi",
year = "2016",
month = "2",
day = "1",
doi = "10.1364/OME.6.000660",
language = "English",
volume = "6",
pages = "660--670",
journal = "Optical Materials Express",
issn = "2159-3930",
publisher = "Optical Society of America (OSA)",
number = "2",

}

Pfeiffer, K, Shestaeva, S, Bingel, A, Munzert, P, Ghazaryan, L, van Helvoirt, CAA, Kessels, WMM, Sanli, UT, Grevent, C, Schütz, G, Putkonen, M, Buchanan, I, Jensen, L, Ristau, D, Tünnermann, A & Szeghalmi, A 2016, 'Comparative study of ALD SiO2 thin films for optical applications', Optical Materials Express, vol. 6, nr. 2, blz. 660-670. https://doi.org/10.1364/OME.6.000660

Comparative study of ALD SiO2 thin films for optical applications. / Pfeiffer, Kristin; Shestaeva, Svetlana; Bingel, Astrid; Munzert, Peter; Ghazaryan, Lilit; van Helvoirt, C.A.A.; Kessels, W.M.M.; Sanli, Umut T.; Grevent, Corinne; Schütz, G.; Putkonen, M.; Buchanan, Iain; Jensen, Lars; Ristau, Detlev; Tünnermann, Andreas; Szeghalmi, Adriana.

In: Optical Materials Express, Vol. 6, Nr. 2, 01.02.2016, blz. 660-670.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

TY - JOUR

T1 - Comparative study of ALD SiO2 thin films for optical applications

AU - Pfeiffer, Kristin

AU - Shestaeva, Svetlana

AU - Bingel, Astrid

AU - Munzert, Peter

AU - Ghazaryan, Lilit

AU - van Helvoirt, C.A.A.

AU - Kessels, W.M.M.

AU - Sanli, Umut T.

AU - Grevent, Corinne

AU - Schütz, G.

AU - Putkonen, M.

AU - Buchanan, Iain

AU - Jensen, Lars

AU - Ristau, Detlev

AU - Tünnermann, Andreas

AU - Szeghalmi, Adriana

PY - 2016/2/1

Y1 - 2016/2/1

N2 - We have investigated the suitability of atomic layer deposition (ALD) for SiO2 optical coatings and applied it to broadband antireflective multilayers in combination with HfO2 as the high refractive index material. SiO2 thin films were successfully grown using tris[dimethylamino]silane (3DMAS), bis[diethylamino]silane (BDEAS) with plasma activated oxygen as precursors, and the AP-LTO330 precursor with ozone, respectively. The amorphous SiO2 films show very low optical losses within a spectral range of 200 nm to 1100 nm. Laser calorimetric measurements show absorption losses of 300 nm thick SiO2 films of about 1.5 parts per million at a wavelength of 1064 nm. The films are optically homogeneous and possess a good scalability of film thickness. The film surface porosity - which correlates to a shift in the transmittance spectra under vacuum and air conditions - has been suppressed by optimized plasma parameters or Al2O3 sealing layers.

AB - We have investigated the suitability of atomic layer deposition (ALD) for SiO2 optical coatings and applied it to broadband antireflective multilayers in combination with HfO2 as the high refractive index material. SiO2 thin films were successfully grown using tris[dimethylamino]silane (3DMAS), bis[diethylamino]silane (BDEAS) with plasma activated oxygen as precursors, and the AP-LTO330 precursor with ozone, respectively. The amorphous SiO2 films show very low optical losses within a spectral range of 200 nm to 1100 nm. Laser calorimetric measurements show absorption losses of 300 nm thick SiO2 films of about 1.5 parts per million at a wavelength of 1064 nm. The films are optically homogeneous and possess a good scalability of film thickness. The film surface porosity - which correlates to a shift in the transmittance spectra under vacuum and air conditions - has been suppressed by optimized plasma parameters or Al2O3 sealing layers.

U2 - 10.1364/OME.6.000660

DO - 10.1364/OME.6.000660

M3 - Article

VL - 6

SP - 660

EP - 670

JO - Optical Materials Express

JF - Optical Materials Express

SN - 2159-3930

IS - 2

ER -

Pfeiffer K, Shestaeva S, Bingel A, Munzert P, Ghazaryan L, van Helvoirt CAA et al. Comparative study of ALD SiO2 thin films for optical applications. Optical Materials Express. 2016 feb 1;6(2):660-670. https://doi.org/10.1364/OME.6.000660