Co-Design of a Ka-Band High-Gain Low-Noise Amplifier and Antenna-in-Package

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This paper presents a co-design of Ka-band high-gain low-noise amplifier (LNA) integrated circuit (IC) and antenna-in-package for the 5G applications. In this high-gain Ka-band LNA, a dual-LC tank matching technique is applied at the input to achieve wide-band simultaneous noise and power matching. This LNA IC is implemented in a 0.25 \mum SiGe BiCMOS technology, and the antenna is implemented on a multi-layer printed circuit board (PCB) board. Therefore, this IC is co-designed with bond-wires and passive structures on the PCB. The measured results show that this LNA chip provides 28 dB peak gain at 32 GHz and larger than 20 dB power gain from 27 to 35 GHz. The in-band noise Figure is 3.1-4.1dB.

Originele taal-2Engels
Titel2020 Asia-Pacific Microwave Conference, APMC 2020 - Proceeding
RedacteurenJie Sun, Wai Ho Yu
UitgeverijInstitute of Electrical and Electronics Engineers
Aantal pagina's3
ISBN van elektronische versie9781728169620
StatusGepubliceerd - 8 dec 2020
Evenement2020 Asia-Pacific Microwave Conference, APMC 2020 - Virtual, Hong Kong, Hongkong
Duur: 8 dec 202011 dec 2020


Congres2020 Asia-Pacific Microwave Conference, APMC 2020
StadVirtual, Hong Kong

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