Class 1 bluetooth power amplifier with 24dBm output power and 48% PAE at 2.4GHz in 0.25um CMOS

V. Vathulay, T. Sowlati, D.M.W. Leenaerts

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

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Samenvatting

In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 power level specification (20 dBm) in the Bluetooth Communications standard. We have also investigated hot carrier effects under large signal RF operation of the power amplifier. The two stage circuit, designed in 0.25 µn CMOS technology, utilizes a high-density ring capacitor structure for interstage matching. In a chip-on-board configuration tested at 2.4 GHz, this CMOS power amplifier delivers an output power of 24 dBm with 48% PAE at a supply voltage of 2.5V.
Originele taal-2Engels
TitelProceeding of ICECS 2001, 18-20 Sept. 2001
Pagina's57-60
StatusGepubliceerd - 2001
Evenementconference; ICECS 2001 -
Duur: 1 jan 2001 → …

Congres

Congresconference; ICECS 2001
Periode1/01/01 → …
AnderICECS 2001

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  • Citeer dit

    Vathulay, V., Sowlati, T., & Leenaerts, D. M. W. (2001). Class 1 bluetooth power amplifier with 24dBm output power and 48% PAE at 2.4GHz in 0.25um CMOS. In Proceeding of ICECS 2001, 18-20 Sept. 2001 (blz. 57-60)