Class 1 bluetooth power amplifier with 24 dBm output power and 48% PAE at 2.4 GHz in 0.25 μ m CMOS

V.R. Vathulya; T. Sowlati; D. Leenaerts

Class 1 bluetooth power amplifier with 24 dBm output power and 48% PAE at 2.4 GHz in 0.25 μ m CMOS

V.R. Vathulya
, T. Sowlati
, D. Leenaerts

Center for Wireless Technology Eindhoven

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

24 Citaten (Scopus)

Samenvatting

In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 power level specification (20 dBm) in the Bluetooth Communications standard. We have also investigated hot carrier effects under large signal RF operation of the power amplifier. The two stage circuit, designed in 0.25 μn CMOS technology, utilizes a high-density ring capacitor structure for interstage matching. In a chip-on-board configuration tested at 2.4 GHz, this CMOS power amplifier delivers an output power of 24 dBm with 48% PAE at a supply voltage of 2.5V.

Originele taal-2	Engels
Titel	ESSCIRC 2001
Subtitel	27th European Solid-State Circuits Conference 18 – 20 September 2001 Villach, Austria
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	57-60
Aantal pagina's	4
Status	Gepubliceerd - 2001
Evenement	27th European Solid-State Circuits Conference, ESSCIRC 2001 - Villach, Oostenrijk Duur: 18 sep. 2001 → 20 sep. 2001

Congres

Congres	27th European Solid-State Circuits Conference, ESSCIRC 2001
Land/Regio	Oostenrijk
Stad	Villach
Periode	18/09/01 → 20/09/01

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@inproceedings{6c2309e80339443b94f3ad08b1fb08ba,

title = "Class 1 bluetooth power amplifier with 24 dBm output power and 48\% PAE at 2.4 GHz in 0.25 μ m CMOS",

abstract = "In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 power level specification (20 dBm) in the Bluetooth Communications standard. We have also investigated hot carrier effects under large signal RF operation of the power amplifier. The two stage circuit, designed in 0.25 μn CMOS technology, utilizes a high-density ring capacitor structure for interstage matching. In a chip-on-board configuration tested at 2.4 GHz, this CMOS power amplifier delivers an output power of 24 dBm with 48\% PAE at a supply voltage of 2.5V.",

author = "V.R. Vathulya and T. Sowlati and D. Leenaerts",

year = "2001",

language = "English",

pages = "57--60",

booktitle = "ESSCIRC 2001",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "27th European Solid-State Circuits Conference, ESSCIRC 2001 ; Conference date: 18-09-2001 Through 20-09-2001",

}

Vathulya, VR, Sowlati, T & Leenaerts, D 2001, Class 1 bluetooth power amplifier with 24 dBm output power and 48% PAE at 2.4 GHz in 0.25 μ m CMOS. in ESSCIRC 2001: 27th European Solid-State Circuits Conference 18 – 20 September 2001 Villach, Austria., 1471333, Institute of Electrical and Electronics Engineers, blz. 57-60, 27th European Solid-State Circuits Conference, ESSCIRC 2001, Villach, Oostenrijk, 18/09/01.

Class 1 bluetooth power amplifier with 24 dBm output power and 48% PAE at 2.4 GHz in 0.25 μ m CMOS. / Vathulya, V.R.; Sowlati, T.; Leenaerts, D.
ESSCIRC 2001: 27th European Solid-State Circuits Conference 18 – 20 September 2001 Villach, Austria. Institute of Electrical and Electronics Engineers, 2001. blz. 57-60 1471333.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Class 1 bluetooth power amplifier with 24 dBm output power and 48% PAE at 2.4 GHz in 0.25 μ m CMOS

AU - Vathulya, V.R.

AU - Sowlati, T.

AU - Leenaerts, D.

PY - 2001

Y1 - 2001

N2 - In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 power level specification (20 dBm) in the Bluetooth Communications standard. We have also investigated hot carrier effects under large signal RF operation of the power amplifier. The two stage circuit, designed in 0.25 μn CMOS technology, utilizes a high-density ring capacitor structure for interstage matching. In a chip-on-board configuration tested at 2.4 GHz, this CMOS power amplifier delivers an output power of 24 dBm with 48% PAE at a supply voltage of 2.5V.

AB - In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 power level specification (20 dBm) in the Bluetooth Communications standard. We have also investigated hot carrier effects under large signal RF operation of the power amplifier. The two stage circuit, designed in 0.25 μn CMOS technology, utilizes a high-density ring capacitor structure for interstage matching. In a chip-on-board configuration tested at 2.4 GHz, this CMOS power amplifier delivers an output power of 24 dBm with 48% PAE at a supply voltage of 2.5V.

UR - https://www.scopus.com/pages/publications/0012977790

M3 - Conference contribution

AN - SCOPUS:0012977790

SP - 57

EP - 60

BT - ESSCIRC 2001

PB - Institute of Electrical and Electronics Engineers

T2 - 27th European Solid-State Circuits Conference, ESSCIRC 2001

Y2 - 18 September 2001 through 20 September 2001

ER -

Class 1 bluetooth power amplifier with 24 dBm output power and 48% PAE at 2.4 GHz in 0.25 μ m CMOS

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Congres

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