Charge manipulation and imaging of the Mn acceptor state in GaAs by cross-sectional scanning tunneling microscopy

A.M. Yakunin, A.Y. Silov, P.M. Koenraad, W. Roy, van, J. De Boeck, J.H. Wolter

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

4 Citaten (Scopus)

Samenvatting

An individual Mn acceptor in GaAs is mapped by cross-sectional scanning tunneling microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn/sup 2+/3d/sup 5/ + hole) complex. We propose that the observed anisotropy of the Mn acceptor wavefunction is due to the d-wave present in the acceptor ground state
Originele taal-2Engels
Pagina's (van-tot)539-545
TijdschriftSuperlattices and Microstructures
Volume34
Nummer van het tijdschrift3-6
DOI's
StatusGepubliceerd - 2003

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