Characterization of waveguide photonic crystal reflectors on indium phosphide membranes

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We present waveguide photonic crystal reflectors on the InP-membrane-on-silicon (IMOS) platform, and a method to accurately measure the reflectivity of those reflectors. The photonic crystal holes are patterned on a waveguide using electron-beam lithography and etched through the waveguiding layer to create a broadband distributed Bragg reflector. We show simulations of these reflectors and experimental results of fabricated devices, both showing a high, free-to-choose reflectivity, and high quality factor Fabry-Pérot cavities. We experimentally show reflectivities higher than 95% for the reflectors and a quality factor as high as 15,911±511 for a Fabry-Pérot cavity, using reflectors with a length of only 4 microns. For the first time, to our knowledge, two methods for measuring the reflectivity are used for characterization of on-chip reflectors to accurately determine the reflection. The first method is based on analysis of the transmission through a Fabry-Pérot cavity, the second is based on a direct four-port measurement of the reflector. A systematic error is made in both methods, resulting in an upper and lower boundary for the actual reflection coefficient.
TaalEngels
Artikelnummer8839111
Aantal pagina's7
TijdschriftIEEE Journal of Quantum Electronics
Volume55
Nummer van het tijdschrift6
DOI's
StatusGepubliceerd - 16 sep 2019

Vingerafdruk

Indium phosphide
indium phosphides
Photonic crystals
reflectors
Waveguides
photonics
membranes
waveguides
Membranes
reflectance
crystals
cavities
Q factors
Distributed Bragg reflectors
Electron beam lithography
Systematic errors
Bragg reflectors
systematic errors
lithography
platforms

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    Citeer dit

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    title = "Characterization of waveguide photonic crystal reflectors on indium phosphide membranes",
    abstract = "We present waveguide photonic crystal reflectors on the InP-membrane-on-silicon (IMOS) platform, and a method to accurately measure the reflectivity of those reflectors. The photonic crystal holes are patterned on a waveguide using electron-beam lithography and etched through the waveguiding layer to create a broadband distributed Bragg reflector. We show simulations of these reflectors and experimental results of fabricated devices, both showing a high, free-to-choose reflectivity, and high quality factor Fabry-P{\'e}rot cavities. We experimentally show reflectivities higher than 95{\%} for the reflectors and a quality factor as high as 15,911±511 for a Fabry-P{\'e}rot cavity, using reflectors with a length of only 4 microns. For the first time, to our knowledge, two methods for measuring the reflectivity are used for characterization of on-chip reflectors to accurately determine the reflection. The first method is based on analysis of the transmission through a Fabry-P{\'e}rot cavity, the second is based on a direct four-port measurement of the reflector. A systematic error is made in both methods, resulting in an upper and lower boundary for the actual reflection coefficient.",
    keywords = "Photonic Integrated Circuits (PIC), photonic crystals, nanophotonics",
    author = "Sander Reniers and Yuqing Jiao and {van der Tol}, Jos and Kevin Williams and Yi Wang",
    year = "2019",
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    day = "16",
    doi = "10.1109/JQE.2019.2941578",
    language = "English",
    volume = "55",
    journal = "IEEE Journal of Quantum Electronics",
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    T1 - Characterization of waveguide photonic crystal reflectors on indium phosphide membranes

    AU - Reniers,Sander

    AU - Jiao,Yuqing

    AU - van der Tol,Jos

    AU - Williams,Kevin

    AU - Wang,Yi

    PY - 2019/9/16

    Y1 - 2019/9/16

    N2 - We present waveguide photonic crystal reflectors on the InP-membrane-on-silicon (IMOS) platform, and a method to accurately measure the reflectivity of those reflectors. The photonic crystal holes are patterned on a waveguide using electron-beam lithography and etched through the waveguiding layer to create a broadband distributed Bragg reflector. We show simulations of these reflectors and experimental results of fabricated devices, both showing a high, free-to-choose reflectivity, and high quality factor Fabry-Pérot cavities. We experimentally show reflectivities higher than 95% for the reflectors and a quality factor as high as 15,911±511 for a Fabry-Pérot cavity, using reflectors with a length of only 4 microns. For the first time, to our knowledge, two methods for measuring the reflectivity are used for characterization of on-chip reflectors to accurately determine the reflection. The first method is based on analysis of the transmission through a Fabry-Pérot cavity, the second is based on a direct four-port measurement of the reflector. A systematic error is made in both methods, resulting in an upper and lower boundary for the actual reflection coefficient.

    AB - We present waveguide photonic crystal reflectors on the InP-membrane-on-silicon (IMOS) platform, and a method to accurately measure the reflectivity of those reflectors. The photonic crystal holes are patterned on a waveguide using electron-beam lithography and etched through the waveguiding layer to create a broadband distributed Bragg reflector. We show simulations of these reflectors and experimental results of fabricated devices, both showing a high, free-to-choose reflectivity, and high quality factor Fabry-Pérot cavities. We experimentally show reflectivities higher than 95% for the reflectors and a quality factor as high as 15,911±511 for a Fabry-Pérot cavity, using reflectors with a length of only 4 microns. For the first time, to our knowledge, two methods for measuring the reflectivity are used for characterization of on-chip reflectors to accurately determine the reflection. The first method is based on analysis of the transmission through a Fabry-Pérot cavity, the second is based on a direct four-port measurement of the reflector. A systematic error is made in both methods, resulting in an upper and lower boundary for the actual reflection coefficient.

    KW - Photonic Integrated Circuits (PIC)

    KW - photonic crystals

    KW - nanophotonics

    U2 - 10.1109/JQE.2019.2941578

    DO - 10.1109/JQE.2019.2941578

    M3 - Article

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    JO - IEEE Journal of Quantum Electronics

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