Characterization and modeling of gain spectra of single-layer InAs/InP(100) quantum dot amplifiers

Y. Jiao, P.J. Veldhoven, van, E. Smalbrugge, M.K. Smit, E.A.J.M. Bente

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In this contribution we present the small signal net modal gain measurement results of single-layer InAs/InP(100) quantum dot amplifiers in 1.6 to 1.8 µm wavelength range. The material shows sufficient optical gain to be used in the long-wavelength optical coherence tomography. The modal gain has been observed as a function of current density and temperature. An improved rate equation model has been applied to analyse the measurements. A good fit of the theory to the measurements was obtained with a temperature dependent carrier injection efficiency which is below 2%.
Originele taal-2Engels
StatusGepubliceerd - 2012


Bibliografische nota

Proceedings of the 17th Annual symposium of the IEEE Photonics Benelux Chapter, 29-30 November 2012, Mons, Belgium

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