Carrier induced magnetic interaction in the diluted magnetic semiconductor PbSnMnTe

W.J.M. Jonge, de; H.J.M. Swagten; R.R. Galazka; P. Warmenbol; J.T. Devreese

doi:10.1109/20.92168

Carrier induced magnetic interaction in the diluted magnetic semiconductor PbSnMnTe

W.J.M. Jonge, de
, H.J.M. Swagten
, R.R. Galazka
, P. Warmenbol
, J.T. Devreese

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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Low-temperature AC susceptibility and specific heat measurements have been performed to study the influence of the concentration of charge carriers on the ferromagnetic phase transition of Pb1-x-y SnyMnxTe for various compositions (0.005&les;x&les;0.1, 0.4&les;y&les;1.0). A critical carrier density above which a ferromagnetic transition can take place is observed. This behavior is also reflected in the Curie-Weiss temperature T obtained from high-temperature susceptibility data. A simple modified RKKY mechanism for semiconductors is proposed in which carriers from two valence bands located in different regions of the Brillouin zone contribute. The effect of a finite mean free path of the carriers is taken into account. This model gives excellent agreement with the data is obtained without the use of a fitting parameter

Originele taal-2	Engels
Pagina's (van-tot)	2542-2547
Tijdschrift	IEEE Transactions on Magnetics
Volume	24
Nummer van het tijdschrift	6
DOI's	https://doi.org/10.1109/20.92168
Status	Gepubliceerd - 1988

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@article{1e536ea0a84d4525be66fb7fd55f5998,

title = "Carrier induced magnetic interaction in the diluted magnetic semiconductor PbSnMnTe",

abstract = "Low-temperature AC susceptibility and specific heat measurements have been performed to study the influence of the concentration of charge carriers on the ferromagnetic phase transition of Pb1-x-y SnyMnxTe for various compositions (0.005\&les;x\&les;0.1, 0.4\&les;y\&les;1.0). A critical carrier density above which a ferromagnetic transition can take place is observed. This behavior is also reflected in the Curie-Weiss temperature T obtained from high-temperature susceptibility data. A simple modified RKKY mechanism for semiconductors is proposed in which carriers from two valence bands located in different regions of the Brillouin zone contribute. The effect of a finite mean free path of the carriers is taken into account. This model gives excellent agreement with the data is obtained without the use of a fitting parameter",

author = "\{Jonge, de\}, W.J.M. and H.J.M. Swagten and R.R. Galazka and P. Warmenbol and J.T. Devreese",

year = "1988",

doi = "10.1109/20.92168",

language = "English",

volume = "24",

pages = "2542--2547",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers",

number = "6",

}

TY - JOUR

T1 - Carrier induced magnetic interaction in the diluted magnetic semiconductor PbSnMnTe

AU - Jonge, de, W.J.M.

AU - Swagten, H.J.M.

AU - Galazka, R.R.

AU - Warmenbol, P.

AU - Devreese, J.T.

PY - 1988

Y1 - 1988

N2 - Low-temperature AC susceptibility and specific heat measurements have been performed to study the influence of the concentration of charge carriers on the ferromagnetic phase transition of Pb1-x-y SnyMnxTe for various compositions (0.005&les;x&les;0.1, 0.4&les;y&les;1.0). A critical carrier density above which a ferromagnetic transition can take place is observed. This behavior is also reflected in the Curie-Weiss temperature T obtained from high-temperature susceptibility data. A simple modified RKKY mechanism for semiconductors is proposed in which carriers from two valence bands located in different regions of the Brillouin zone contribute. The effect of a finite mean free path of the carriers is taken into account. This model gives excellent agreement with the data is obtained without the use of a fitting parameter

AB - Low-temperature AC susceptibility and specific heat measurements have been performed to study the influence of the concentration of charge carriers on the ferromagnetic phase transition of Pb1-x-y SnyMnxTe for various compositions (0.005&les;x&les;0.1, 0.4&les;y&les;1.0). A critical carrier density above which a ferromagnetic transition can take place is observed. This behavior is also reflected in the Curie-Weiss temperature T obtained from high-temperature susceptibility data. A simple modified RKKY mechanism for semiconductors is proposed in which carriers from two valence bands located in different regions of the Brillouin zone contribute. The effect of a finite mean free path of the carriers is taken into account. This model gives excellent agreement with the data is obtained without the use of a fitting parameter

U2 - 10.1109/20.92168

DO - 10.1109/20.92168

M3 - Article

SN - 0018-9464

VL - 24

SP - 2542

EP - 2547

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 6

ER -

Carrier induced magnetic interaction in the diluted magnetic semiconductor PbSnMnTe

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