Strain engineered InAs/GaAs quantum dot (QD) clusters grown on (311)B GaAs are studied by means oftime-resolved differential reflection spectroscopy revealing coherent excitation of the quasilongitudinaland quasitransverse acoustic phonon modes. Photogenerated carriers which are captured within the orderedlateral QD clusters initiate coherent acoustic phonon excitation, which induces a transient modulationof the local strain-induced piezoelectric field within the QD clusters. The excited acoustic phonons modulatethe optical properties of the QDs through the quantum-confined Stark effect, causing oscillations ofthe reflection signal.
Bogaart, E. W., Lippen, van, T., Nötzel, R., Haverkort, J. E. M., & Wolter, J. H. (2006). Carrier-induced coherent acoustic phonon excitation in strain engineered InAs/GaAs quantum dot clusters. Physica Status Solidi C: Conferences, 3(11), 3713-3716. https://doi.org/10.1002/pssc.200671570