Carrier dynamics in small InAs/GaAs quantum dots

N. Zurauskiene, S. Marcinkevicius, G. Janssen, E. Goovaerts, A. Bouwen, P.M. Koenraad, J.H. Wolter

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

3 Citaten (Scopus)

Samenvatting

Photo-excited carrier dynamics in small InAs/GaAs quantum dots was investigated in the temperature range from 80 up to 230 K by time-resolved photoluminescence. Very long lifetimes (up to 10 ns) are observed in this system at low temperatures and excitation intensities. At low excitation intensity the luminescence peak exhibits a red shift at later times after the excitation. At higher excitation intensities the luminescence peak is blue-shifted, the spectrum broadens and a faster decay is obtained. Photo-excited carrier dynamics is discussed considering different processes related to trapping and thermal escape of the carriers as well as their relaxation and recombination, taking into account confinement effects and the wetting layer as a possible channel for carrier exchange.
Originele taal-2Engels
TitelUltrafast phenomena in semiconductors 2001 : proceedings of the 11th International Symposium on Ultrafast Phenomena in Semiconductors (11-UFPS), held in Vilnius, Lithuania, 27 - 29 August 2001
RedacteurenC.C. Sorrell
Plaats van productieUetikon-Zuerich
UitgeverijTrans Tech Publications
Pagina's31-34
ISBN van geprinte versie0-87849-890-7
DOI's
StatusGepubliceerd - 2002
Evenementconference; International Symposium on Ultrafast Phenomena in Semiconductors ; 11 (Vilnius) : 2001.08.27-29 -
Duur: 1 jan 2002 → …

Publicatie series

NaamMaterials Science Forum
Volume384-385
ISSN van geprinte versie0255-5476

Congres

Congresconference; International Symposium on Ultrafast Phenomena in Semiconductors ; 11 (Vilnius) : 2001.08.27-29
Periode1/01/02 → …
AnderInternational Symposium on Ultrafast Phenomena in Semiconductors ; 11 (Vilnius) : 2001.08.27-29

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